Infineon Technologies Austria Ag

Herbert Hutter

Stefan Schwab

A semiconductor device includes a first semiconductor component having a semiconductor substrate, and a barrier layer disposed at least on or at a portion of the first semiconductor component. The barrier layer includes a polymer material and an organic metal complexing agent covalently bound to the polymer material. In an embodiment, the organic metal complexing agent includes a crown ether and/or cryptand. In an embodiment, the polymer material includes a homopolymer or copolymer resulting from the polymerization of monomers selected from the group consisting of: imides, epoxies, silicones, monomers having functional side chains, methacrylates, and any combinations thereof.

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Vienna, Austria

Herbert Hutter