Daimler Chrysler Ag

Herbert Guettler

Martin Matt

Eberhard Holder

Viktor Pfeffer

Gerhard Kroetz

Brigitte Konrad

Reinhard Zachai

Erhard Kohn

Guntmar Schulz

Andre Floeter

Peter Bodo Gluche

Paul Ziemann

A method for producing a filter element includes forming longitudinal ducts extending between upstream and downstream surfaces of the filter element, and installing a heating element for heating regions of walls of the ducts along longitudinal extent of the walls. The filter element is arranged inside an injection valve of an internal combustion engine.

Injection valve

A method for heating a fuel flowing through an injection valve into a combustion space of an internal combustion engine includes conveying fuel through ducts of a filter element arranged in the fuel flow, heating walls of the throughflow ducts at least in certain regions along their longitudinal extent, and introducing heat from the walls into the fuel.

An injection valve for internal combustion engines has a filter element arranged on the inside of the injection valve in the fuel flow of the latter with ducts for the fuel. The filter element is designed as a throughflow heating element, for which purposes the walls of the throughflow ducts are capable of being heated, at least in certain regions, along their longitudinal extent.

A method for producing a composite structure for microelectronic devices includes producing several microelectronic devices by means of a deposition method, preseeding a surface with growth seeds for a diamond and depositing the diamond layer from a gas phase. The diamond layer is provided with thin spots between the devices. According to the invention, the devices are laid down initially on a growth substrate directly and/or with the use of the material of the growth substrate. Following the deposition of the devices, the latter are seeded on their free surfaces for the diamond layer. The diamond layer is located on the seeded free surfaces of the devices.

Composite structure with a growth substrate having a diamond layer and a plurality of microelectronic components, and process for producing such a composite structure

A method for producing a composite structure for microelectronic devices includes producing several microelectronic devices by means of a deposition method, pre-seeding a surface with growth seeds for a diamond and depositing the diamond layer from a gas phase. The diamond layer is provided with thin spots between the devices. According to the invention, the devices are laid down initially on a growth substrate directly and/or with the use of the material of the growth substrate. Following the deposition of the devices, the latter are seeded on their free surfaces for the diamond layer. The diamond layer is located on the seeded free surfaces of the devices.

Composite structure with a growth substrate having a diamond layer and a

A growth substrate having growth nuclei made of diamond and/or diamond-like carbon arranged on its growth surface, the orientation of over 50% of the growth nuclei deviating by less than 10.degree. from the crystal orientation defined by the growth substrate corresponding to Miller's indices (h, k, l) and the nucleus density changes between the center of the growth substrate and a distance of maximally 15 mm from the center by maximally 80%. The method also relates to a process for the growth substrate's manufacture.

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Elchingen, Germany

Herbert Guettler