Robert Boschgmbh

Herbert Goebel

Richard Spitz

Vesna Biallas

Vesna Goebel

Klaus Heyers

Anton Mindl

Christoph Treutler

Walter Emili

Harald Wanka

Werner Herden

Heribert Weber

Manfred Vogel

Hans Hecht

Jiri Marek

Wolfgang E Mueller

Friedhelm Meyer

Johann Konrad

Martin Zechnall

Manfred Lembke

Steffen Schmidt

Martin Frey

Martin Willmann

Werner Steiner

Holger Haussmann

Henning Stilke

Andreas Lock

Hans-Friedemann Kober

Siegfried Schuler

Hans-Ulrich Gruber

Joerg Buth

Franz Riedinger

Vesna Gobel

Ulrich Schaefer

A method of producing well-defined polycrystalline silicon regions is described, in particular for producing electrically conducting regions, in which a substrate is provided with an insulating layer and a layer of doped amorphous silicon, electromagnetic irradiation is performed using a laser source to produce the electrically conducting regions, and a shadow mask is positioned between the laser source and the substrate having the layer for definition of the contours of the electrically conducting regions.

Method for producing defined polycrystalline silicon areas in an amorphous silicon layer

A semiconductor arrangement and a method for manufacturing the semiconductor arrangement are provided, which arrangement and method allow an improvement in the current-carrying capacity for given chip dimensions. The semiconductor arrangement includes trenches introduced in the interior of the chip, which trenches reduce power loss and improve the heat dissipation of the chip, as well as reduce the forward voltage of diode.

Semiconductor diode and method for producing the same

A trimming resistor is manufactured by depositing a resistive layer on a substrate, with a passivation layer having windows, and a contact layer which is in contact with the resistive layer via the windows. Trimming is carried out by interrupting the contact layer at narrow spots or regions. This invention has application for the manufacture of high-pressure sensors.

Planar trimming resistor, applications and method for its manufacture

A method is proposed that functions to produce Zener diodes. The method includes a two-part film diffusion step for producing flatter and deeper doping profiles using neutral films.

Method for producing diodes

A sensor has a membrane, on which at least one resistor element is situated. The membrane has a membrane layer which is composed of a plurality of partial layers. In addition, a covering layer is provided which is composed of a plurality of partial layers. The partial layers of the membrane and the covering layer are selected so that both in the membrane and in the covering layer light tensile stresses are set, the tensile stresses preferably being roughly the same.

Sensor having a membrane

A sensor has a thin film element, the thin film element having a temperature-dependent electrical resistance. The thin film element includes a platinum layer, which is doped with zircon or zircon oxide. The thin film element can be arranged on a membrane to create a mass airflow sensor.

Sensor having a thin film element

In a semiconductor arrangement and a method for manufacturing a semiconductor arrangement, varying diffusion rates are attained by introducing crystal disorder structures into a silicon crystal. The semiconductor structure includes a semiconductor wafer which has a first layer and a second layer, which form a p-n junction. Because the diffusion rates vary, the gradient of the dopant concentration of the second layer in the edge area is greater (merely) than in the middle area. As a result, a breakdown of the p-n junction in the edge area is reached at higher voltages than in the middle area.

Method for manufacturing a semiconductor arrangement by introducing

A method for manufacturing a silicon wafer, in which a diffusion process takes place. During the diffusion process, a dopant foil is applied to one side, and a neutral foil to the other side. The silicon wafers are cut out by means of wire sawing out of a silicon monocrystal, since they then exhibit an optimal surface roughness for the subsequent diffusion process.

Method for manufacturing a silicon wafer by using a dopant foil

High-voltage breakover diode

A rectifier arrangement for a three-phase generator having at least one power diode allocated to each half-wave of each phase and a cooling arrangement for the power diodes. The power diodes may be designed as diode chips and be arranged between two diametrically opposed heat sinks, while being oriented with respect to polarity and electrically and/or thermally conductive.

Rectifier arrangement for a three-phase generator

In a method for producing a diode, a first, strongly positively doped silicon wafer is bonded in accordance with the silicon fusion method to a second, weakly negatively doped silicon wafer, and subsequently the weakly negatively doped second silicon wafer is ground down to a predetermined thickness. A chromium layer which contains a small percentage of arsenic is used for resistive contact-making on the negatively doped second silicon wafer. In this way, a diode is obtained which has a small forward voltage in conjunction with a precise breakdown voltage.

Method for producing a diode

Semiconductor arrangements, in particular diodes, have a p-layer and two n-layers that are doped to varying degrees of thickness. The p-n junction between the p-layer and the heavily doped n-layer is arranged in the chip so as to allow it to lie completely inside the chip. The p-n junction between the p-layer and the n-layer is situated in the outside areas of the chip. This arrangement does not permit any high field strengths to occur on the outside of the chip and, at the same time, it makes it possible for easily reproducible properties to be achieved. The manufacturing method can also be carried-out outside of a clean room.

Semiconductor arrangement and method for its manufacture

Process for manufacturing semiconductor components

The invention relates to a method for soldering together a first, in particular electrical, component with a second, in particular electrical, component, where a solder preform is disposed between the components and is fixed by pressing it against edges of at least one depression in one of the components to prevent lateral dislocation and where subsequently the soldering process takes place, preferably in a soldering furnace. A special feature is that the depression is formed as grooves (10) extending in a closed loop (11), in particular in the shape of a circle.

Method of soldering together two components

Multi-layer silicon structures particularly micromechanical sensors, can be made by cleaning and polishing respective surfaces of two silicon wafers, assembling the wafers together under clean room conditions and adhering them together by temperature treatment. This method is improved by the pretreatment of the wafer surfaces using fuming nitric acid (e.g., 100% HNO.sub.3), rinsing with de-ionized water, drying, and temperature treatment at a lower temperature than was previously thought necessary, namely between 100.degree. and 400.degree. C. This has the advantage that such gentler treatment preserves previously-applied integrated circuit structures, which can therefore be applied before the wafer assembly steps. The method is particularly suitable for producing pressure sensors having a pressure-responsive silicon membrane, and an evaluation circuit integrated on the silicon wafer. Such sensors are suitable for use in motor vehicles for measuring engine pressures and for measuring brake fluid pressures in anti-lock braking systems (ABS).

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Reutlingen, Germany

Herbert Goebel