Luxtron Corporation

Xinix, Inc.

Other

Herbert E Litvak

Steven C Leach

Edward G Rodgers

Edward G Rogers

Mei H Sun

Earl M Jensen

Richard Savage

Huey M Tzeng

Mariste A Thomson

Daniel E Glenn

Emir Gurer

Lin Jun Zhou

Jewett W Fowler

Frank J Hausman

Russell E Lewis

Richard E Howard

In a process of selectively removing material from an exposed layer carried by a substrate, a technique for determining endpoint by monitoring the intensity of a radiation beam that is passed through the substrate an any intervening layers to be reflected off the layer being processed. This monitoring technique is used during photoresist developing, wet etching, and mechanical planarization and polishing during the manufacture of integrated circuits on semiconductor wafers, flat panel displays on glass substrates, and similar articles. Planarization and polishing processes are alternately monitored by monitoring temperature.

Optical techniques of measuring endpoint during the processing of material layers in an optically hostile environment

In a process of selectively removing material from an exposed layer carried by a substrate, a technique for determining endpoint by monitoring the intensity of a radiation beam that is passed through the substrate and any intervening layers to be reflected off the layer being processed. This monitoring technique is used during photoresist developing, wet etching, and mechanical planarization and polishing during the manufacture of integrated circuits on semiconductor wafers, flat panel displays on glass substrates and similar articles. Planarization and polishing processes are alternatively monitored by monitoring temperature.

In a process of selectively removing material from an exposed layer carried by a substrate, a technique for determining endpoint by monitoring the intensity of a radiation beam that is passed through the substrate and any intervening layers to be reflected off the layer being processed. This monitoring technique is used during photoresist developing, wet etching, and mechanical planarization and polishing during the manufacture of integrated circuits on semiconductor wafers, flat panel displays on glass substrates, and similar articles. Planarization and polishing processes are alternatively monitored by monitoring temperature.

Optical techniques of measuring endpoint during the processing of

An apparatus for spin coating surfaces with liquid polymer comprises a spin coating chamber having a rotatable chuck for supporting an object to be coated. A distributor introduces gases into the chamber. A solvent vapor and carrier gas supply provides a carrier gas having a controlled level of solvent vapor therein within the range of from 0 to saturation concentrations of solvent vapor. A solvent vapor sensor is positioned with respect to the coating chamber to produce signals which correspond to the concentration of solvent vapor in the coating chamber. A control means is connected to the solvent vapor concentration sensor and to the solvent vapor and carrier gas supply means for controlling the level of solvent concentration in the carrier gas supplied by the solvent vapor and carrier gas supply means. The solvent vapor level can be obtained by controlled mixing of solvent-bearing and solvent-free gas streams, or by injection of solvent into a gas stream by means of an atomizer, for example. The solvent vapor concentration sensor includes a component positioned for exposure to solvent vapor and which has a property which changes as a function of the solvent vapor concentration to which it is exposed. A preferred sensor can include a membrane, the vibrational frequency of which changes as a function of the solvent vapor concentration to which it is exposed; a surface, an electrical property of which changes as a function of the solvent vapor concentration to which it is exposed; a sensor which detects an acoustical property which changes as a function of the solvent vapor concentration to which it is exposed; or an optical detector which detects an optical property which changes as a function of the solvent vapor concentration to which it is exposed.

Photoresist coating process control with solvent vapor sensor

In an apparatus for removing material from an article, such as an exposed surface of an intermediate integrated circuit structure, by planarizing, polishing, etching or the like, a sensor is mechanically coupled to a moving carrier of the article for directing through the article to its first side an electromagnetic radiation beam having a wavelength band to which the structure is substantially transparent. The beam is detected after interacting with the article, such as being reflected from its exposed surface, and resulting information of the state of the processing of the exposed surface is transmitted from the moving carrier to a stationary receiver by radiation without the use of any physical transmission media such as wires or optical fibers. Multiple sensors mounted on the moving article carrier provide information of the uniformity of the processing across the exposed article surface. The radiation signal received by the stationary receiver is used to monitor or control the processing, such as by determining an endpoint thereof.

In situ technique for monitoring and controlling a process of

An improved method for minimizing interferences from random noise and correlated fluctuations which obscure electrical signals converted from optical emissions. In particular, an improved method for the removal of interferences from optical emission signals during endpoint determination in dry etching processes for the fabrication of micro-electronic devices which derives information in the presence of random noise, correlated fluctuations and periodic modulations of the plasma by maximizing the signal to random noise ratio and minimizing the obscuring effects of correlated fluctuation.

Interference removal

An improved method for minimizing interferences from random noise and correlated fluctuations which obscure electrical signals converted from optical emissions. In particular, an improved method for the removal of interferences from optical emission signals during endpoint determination in dry etching processes for the fabrication of microelectronic devices which derives information in the presence of random noise, correlated fluctuations and periodic modulations of the plasma by maximizing the signal to random noise ratio and minimizing the obscuring effects of correlated fluctuation.

Techniques of monitoring and controlling removal or forming of layers of material, such as employed in the manufacture of flat panel displays and integrated circuit wafers. Examples of material removal include the development of a photoresist layer and etching of layers of other material according to a pattern across the surface of the layer. The material removal process is terminated in response to detecting when breakthrough occurs in a preselected number of individual regions across the surface of the layer. A measure of uniformity of processing across the layer surface is obtained from monitoring removal of material in such individual surface regions, and can be used to control the process to improve such uniformity.

Endpoint and uniformity determinations in material layer processing

Methods and apparatus for enhancing the accuracy for detecting the endpoint of certain operations (such as etching, photoresist development or chemical reaction) in the processing of materials which results in a change in the reflectivity or refractive index of the material are provided. The methods decrease the sensitivity of endpoint detection to high frequency noise and periodic oscillations. The methods also allow accurate calculation of overprocessing time and real-time viewing of data by the user.

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Cupertino, CA, United States of America

Herbert E Litvak