Osram Opto Semiconductors Gmbh

Osram Gmbh

Siemens Aktiengesellschaft

Osram Oled Gmbh

Osram Gesellschaft MIT Beschrankter Haftung

Osram Opto Semiconductor Gmbh

Osram Ag

Osram Opto Semi-conductors Gmbh Co. Ohg

Osram Opto Semiconductors Gmbh & Co.

Patent Treuhand Gesellschaft Fur Elektrische Gluhlampen Mbh

Herbert Brunner

Günter Waitl

Franz Schellhorn

Georg Bogner

Harald Jäger

Jörg Erich Sorg

Karlheinz Arndt

Guenther Waitl

Frank Singer

Tim Fiedler

Markus Pindl

Alfred Lell

Harald König

Roland Schulz

Siegfried Herrmann

Thomas Schwarz

Berthold Hahn

Bert Braune

Ewald Karl Michael Guenther

Alexandra Debray

Hans-Christoph Gallmeier

Julius Muschaweck

Klaus Höhn

Daniel Richter

Stefan Gruber

Thomas Zeiler

Norwin Von Malm

Ralph Wirth

Volker Härle

Gunther Waitl

Martin Zachau

Frank Jermann

Florian Peskoller

Karsten Auen

Kirstin Petersen

Markus Zeiler

Roland Hüttinger

Thomas Höfer

Robert Lutz

Günther Waitl

Stefan Grötsch

Simon Jerebic

Tobias Gebuhr

Bernhard Bachl

Markus Boss

Heinz Haas

Frank Möllmer

Dieter Eissler

Daniel Leisen

Thomas Reeswinkel

Christina Keith

Michael Hiegler

Günter Kirchberger

G&uuml;nter Waitl

Steffen Köhler

Stephan Preuβ

Jörg Strauss

Jörg Strauβ

Rainer Sewald

Patrick Ninz

Stefan Illek

Matthias Sabathil

Jürgen Moosburger

Reiner Windisch

Ion Stoll

Werner Spaeth

Alexander Linkov

Martin Brandl

Norbert Stath

Ulrich Zehnder

Gertrud Kräuter

Hans Hurt

Ales Markytan

Johann Luft

Wolfgang Gramann

Rainer Huber

Thomas Schlereth

Helmut Fischer

Ernst Nirschl

Juergen Moosburger

Hubert Ott

Werner Spath

Harald Jaeger

Christopher Wiesmann

Albert Schneider

Ralf Wirth

Jens Eberhard

Matthias Winter

Torsten Baade

Christian Gärtner

Markus Kirsch

Daniel Becker

Klaus Müller

Klaus Hoehn

Günter Spath

Ewald Karl Michael Günther

Raimund Schwarz

Ludwig Peyker

Alexander Heindl

Hansjörg Schöll

In one embodiment the semiconductor laser comprises a carrier and an edge-emitting laser diode which is mounted on the carrier and which comprises an active zone for generating a laser radiation and a facet with a radiation exit region. The semiconductor laser further comprises a protective cover, preferably a lens for collimation of the laser radiation. The protective cover is fastened to the facet and to a side surface of the carrier by means of an adhesive. A mean distance between a light entrance side of the protective cover and the facet is at most 60 μm. The semiconductor laser is configured to be operated in a normal atmosphere without additional gas-tight encapsulation.

Semiconductor laser and method of production for optoelectronic semiconductor parts

The invention relates to an optoelectronic component comprising a housing, an optoelectronic semiconductor chip and an optical element. The housing comprises a lead frame which has two external electrical contact points and two contact portions. The housing also comprises a housing body in which the lead frame is embedded, wherein each contact portion extends laterally out of one of the external electrical contact points in each case to a mounting surface of the housing, and therefore contact surfaces of the contact portions are exposed on the mounting surface. An electrical contact structure of the optical element is electrically conductively connected to the contact surfaces of the contact portions.

Optoelectronic component

In one embodiment the semiconductor laser () comprises a carrier () and an edge-emitting laser diode () which is mounted on the carrier () and which comprises an active zone () for generating a laser radiation (L) and a facet () with a radiation exit region (). The semiconductor laser () further comprises a protective cover (), preferably a lens for collimation of the laser radiation (L). The protective cover () is fastened to the facet () and to a side surface () of the carrier () by means of an adhesive (). A mean distance between a light entrance side () of the protective cover () and the facet () is at most 60 &#x3bc;m. The semiconductor laser () is configured to be operated in a normal atmosphere without additional gas-tight encapsulation.

A method of manufacturing an optoelectronic component includes providing a carrier with an upper side; arranging an optoelectronic semiconductor chip above the upper side of the carrier; arranging a casting material above the upper side of the carrier, wherein the optoelectronic semiconductor chip is embedded in the casting material, and the casting material forms a cast surface; simultaneously spraying particles and a further material onto the cast surface, wherein a mixture of the further material and the particles includes a proportion of the particles of 20 percent by weight to 60 percent by weight, a portion of the particles remains at the cast surface, and a topography is created at the cast surface.

Method of producing an optoelectronic component

A method of manufacturing an optoelectronic component includes providing a carrier with an upper side; arranging an optoelectronic semiconductor chip above the upper side of the carrier; arranging a casting material over the upper side of the carrier, wherein the optoelectronic semiconductor chip is embedded in the casting material, and the casting material forms a cast surface; and removing a portion of the casting material at the cast surface, wherein a topography is generated at the cast surface, and the removal of a portion of the casting material at the cast surface takes place through laser interference structuring.

A method of producing an optoelectronic semiconductor component includes providing a carrier including two metal layers, wherein the metal layers are detachable from one another, securing an optoelectronic semiconductor chip on the first metal layer of the carrier, and mechanically detaching the second metal layer from the first metal layer.

Method of producing an optoelectronic semiconductor component, optoelectronic semiconductor component, and temporary carrier

The invention relates to a semiconductor component () comprising: a plurality of semiconductor chips (), each having a semiconductor layer sequence () with an active region () for generating radiation; a radiation output side () that runs parallel to the active regions (); a mounting side surface () which is provided for securing the semiconductor component, and which runs in a transverse or perpendicular direction to the radiation output side; a molded body () which is shaped in places on the semiconductor chips, and which at least partially forms the mounting side surface; and a contact structure () which is arranged on the molded body, and which connects at least two semiconductor chips of the plurality of semiconductor chips in an electrically conductive manner. The invention also relates to a lighting device () and to a method for producing a semiconductor component.

Semiconductor component, lighting device and method for producing a semiconductor component

A mounting carrier for semiconductor chips includes a second main surface provided for mounting of semiconductor chips, and a first main surface opposite to the second main surface. The mounting carrier also includes a mounting body, wherein the mounting body includes a first metallization on the side facing the first main surface and the first main surface includes a structure having a plurality of columnar structural elements.

Mounting carrier and method of mounting a mounting carrier on a connecting carrier

A method for manufacturing at least one optoelectronic semiconductor device includes providing a substrate and applying a number of optoelectronic semiconductor chips, which are arranged spaced apart from one another in a lateral direction, on an upper face of the substrate. At least one reflective coating is applied to the exposed areas of the substrate and the lateral surfaces of the optoelectronic semiconductor chips. Openings are introduced into the reflective coating, which completely penetrate the reflective coating. Electrically conductive material is arranged on the reflective coating and at least on some parts of the openings. Radiation penetration surfaces of the optoelectronic semiconductor chips are free of the reflective coating and the reflective coating does not laterally extend beyond the optoelectronic semiconductor chips.

Method for manufacturing at least one optoelectronic semiconductor device

In at least one embodiment, the semiconductor component includes an optoelectronic semiconductors chip. Furthermore, the semiconductor component includes a conversion-medium lamina, which is fitted to a main radiation side of the semiconductor chip and is designed for converting a primary radiation into a secondary radiation. The conversion-medium lamina includes a matrix material and conversion-medium particles embedded therein. Furthermore, the conversion-medium lamina includes a conversion layer. The conversion-medium particles are situated in the at least one conversion layer. The conversion-medium particles, alone or together with diffusion-medium particles optionally present, make up a proportion by volume of at least 50% of the conversion layer. Furthermore, the conversion-medium lamina includes a binder layer containing the conversion-medium particles with a proportion by volume of at most 2.5%.

Optoelectronic semiconductor component, conversion-medium lamina and method for producing a conversion-medium lamina

Optoelectronic semiconductor devices and methods for producing optoelectronic semiconductor devices are disclosed. In an embodiment the method includes applying a plurality of arrangements of electrically conductive first and second contact elements on an auxiliary carrier, applying an optoelectronic semiconductor chip on the second contact element of each arrangement and electrically conductively connecting the optoelectronic semiconductor chip to the first contact element for each arrangement. The method further includes encapsulating the first contact elements and the second contact elements with an encapsulation material to form an encapsulation body and singulating the encapsulation body into a plurality of optoelectronic semiconductor devices, wherein the encapsulation material finishes flush with an underside, facing the auxiliary carrier, of each first contact element, and wherein the encapsulation material finishes flush with an underside, facing the auxiliary carrier, of each second contact element.

Method for producing a multiplicity of optoelectronic semiconductor components

An optoelectronic component comprising an optoelectronic semiconductor chip () having a contact side () and a radiation coupling-out side () situated opposite; a chip carrier (), on which the semiconductor chip () is applied via its contact side (); a radiation conversion element () applied on the radiation coupling-out side (); and a reflective potting compound (), which is applied on the chip carrier () and laterally encloses the semiconductor chip () and the radiation conversion element (); wherein the potting compound () adjoins an upper edge of the radiation conversion element () in a substantially flush fashion, such that a top side of the radiation conversion element () is free of the potting compound ().

Optoelectronic component and method for producing an optoelectronic component

A method of producing an optoelectronic component includes providing a cavity; introducing a liquid matrix material with phosphor particles distributed therein into the cavity; introducing a semiconductor chip into the matrix material; sedimenting the phosphor particles in the matrix material; and curing the matrix material, wherein a conversion layer including phosphor particles is produced, said conversion layer being arranged on the semiconductor chip.

Method for producing an optoelectronic component, and optoelectronic component

The invention relates to an optoelectronic component, having &#x2014;a carrier () comprising a first main surface (Ia), &#x2014;at least one optoelectronic semiconductor chip () having no substrate, and &#x2014;a contact metallization (), wherein &#x2014;the carrier () is electrically insulating, &#x2014;the at least one optoelectronic semiconductor chip () is fastened to the first main surface (Ia) of the carrier () by means of a bonding material (), particularly a solder material, &#x2014;the contact metallization () covers at least one area of the first main surface (Ia) free of the optoelectronic semiconductor chip (), and &#x2014;the contact metallization () is electrically conductively connected to the optoelectronic semiconductor chip ().

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Sinzing, Germany

Herbert Brunner