Samsung Electronics Co., Ltd.

Heoung-bin Lim

Yong-woo Heo

Jun-ing Gil

Yong-woo Her

Byoung-woo Son

Eun-mi Bae

Mi-kyung Lee

A nitride film etchant used in the manufacture semiconductor devices, and an etching method using the etchant, are provided. A wafer having a nitride film formed thereon is introduced into a bathing tube containing an etchant which is a water solution containing phosphoric acid (H PO ) of a concentration of 50-70% by weight and hydrofluoric acid (HF), and the nitride film is etched by the etchant. When the concentration of HF is 0.005 to 0.05% by weight, the etch rate of the nitride film is increased, and the selectivity between the nitride film and an oxide film is kept very high. Also, an etchant containing HF of a concentration of 0.05% by weight is provided as a water solution mixed with H PO and HF. Addition of HF of 0.05% by weight or less increases the etch rate of the nitride film, and a high selectivity of the nitride film with respect to an oxide film is maintained.

Etchant used in the manufacture of semiconductor devices and etching method using the same

A wet etching system includes a tank for containing a chemical and having an open top portion, and a heater disposed in the tank for heating the chemical contained therein. A cover is arranged on the open top portion of the tank, and the cover includes a cooling apparatus formed therein. The wet etching method includes placing a semiconductor substrate, having a layer thereon to be etched, into the tank, and then driving the heater to maintain the chemical within a temperature range. Deionized water in the chemical evaporates when the temperature range is greater than a boiling point of the deionized water. The evaporated deionized water condenses on the cooler cover and then flows back into the tank to maintain a constant chemical concentration.

Wet etching system for manufacturing semiconductor devices and wet etching method using the same

Wet etching system for manufacturing semiconductor devices

A device for concentrating chemical substances for use during the fabrication of a semiconductor device uses a sample container for holding chemical substances. A feed tube in gas flow communication with the sample container introduces a carrier gas. A vapor outlet in gas flow communication with the sample container discharges a mixture of a vapor and the carrier gas. A sample heater, disposed above and apart from the sample container, heats the chemical substances to a first predetermined temperature. A gas source supplies the carrier gas, and a gas heater, in gas flow communication with both the gas source and the feed tube, heats the carrier gas to a second predetermined temperature. A condenser in flow communication with the vapor outlet produces a liquid from the vapor, and a collecting container collects the liquid.

Device for and method of concentrating chemical substances for

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Sungnam, South Korea

Heoung-bin Lim