University of California

Yonsei University

I3system Corp.

Heonjin Choi

Peidong Yang

Donghyun Kim

Gunhee Han

Taewook Kim

Jongill Hong

Han Joo Chung

Rongrui He

Seunghan Park

Sooho Bae

Sangkwon Lee

Yanfeng Zhang

Tevye Kuykendal

Seongyeol Pyo

Peter Pauzauskie

Provided is a neural device including at least one nano-wire. The neural device includes a nano-wire formed on a base formed on a first surface of a substrate, and an electrode pad formed on a second surface different from the first surface of the substrate and configured to output an electrical signal gained from a neural fiber through the nano-wire or apply a signal for an electric stimulus to the nano-wire. Therefore, it is possible to prevent the nano-wire from becoming embedded in an encapsulation and maximize a contact between the nano-wire and a nerve.

Neural device having via-hole connection and using at least one nano-wire

A method for is disclosed for fabricating diluted magnetic semiconductor (DMS) nanowires by providing a catalyst-coated substrate and subjecting at least a portion of the substrate to a semiconductor, and dopant via chloride-based vapor transport to synthesize the nanowires. Using this novel chloride-based chemical vapor transport process, single crystalline diluted magnetic semiconductor nanowires GaMnN (x=0.07) were synthesized. The nanowires, which have diameters of &#x2dc;10 nm to 100 nm and lengths of up to tens of micrometers, show ferromagnetism with Curie temperature above room temperature, and magnetoresistance up to 250 Kelvin.

Diluted magnetic semiconductor nanowires exhibiting magnetoresistance

Growing community of inventors

Seoul, South Korea

Heonjin Choi