Samsung Electro-mechanics Co., Ltd.

Seoul National University

Samsung Electronics Co., Ltd.

Samsung Led Co., Ltd.

Heon-su Jeon

Jeong-wook Lee

Kyoung-ho Ha

Suk-ho Yoon

Joo-sung Kim

Yong-jo Park

Si-hyun Park

Ki-sung Kim

Taek Woon Kim

Bok-ki Min

In-ho Lee

Soo-hyung Choi

Jang-seok Ma

Fu Wang

Jin-seo Im

Kwang-hyeon Baik

A nitride-based semiconductor light emitting device having an improved structure in which light extraction efficiency is improved and a method of manufacturing the same are provided. The nitride-based semiconductor light emitting device comprises an n-clad layer, an active layer, and a p-clad layer, which are sequentially stacked on a substrate, wherein the n-clad layer comprises a first clad layer, a second clad layer, and a light extraction layer interposed between the first clad layer and the second clad layer and composed of an array of a plurality of nano-posts, the light extraction layer diffracting or/and scattering light generated in the active layer.

Nitride-based semiconductor light emitting device and method of manufacturing the same

A semiconductor light emitting device having a multiple pattern structure greatly increases light extraction efficiency. The semiconductor light emitting device includes a substrate and a semiconductor layer, an active layer, and an electrode layer formed on the substrate, a first pattern defining a first corrugated structure between the substrate and the semiconductor layer, and a second pattern defining a second corrugated structure on the first corrugated structure of the first pattern.

Light emitting device having multi-pattern structure and method of manufacturing same

Nitride-based semiconductor light emitting device with light extraction layer formed within

Provided are a biochip platform for biochemically analyzing a sample such as DNA or protein, including a dielectric particle layer, and an optical assay apparatus including the same. The biochip platform includes the dielectric particle layer uniformly formed on a substrate. The particle uniformity of the dielectric particle layer enables good wavelength separation of fluorescence signal, and the large surface area of the dielectric particle layer guarantees better amplifications efficiency of fluorescence signal. Furthermore, the biochip platform shows good economical efficiency due to easy fabrication process, and is particularly useful in an optical assay apparatus for analyzing a biochemical sample due to good assay efficiency.

Biochip platform including dielectric particle layer and optical assay apparatus using the same

Provided is a vertical external cavity surface emitting laser (VECSEL) including: a bottom DBR mirror formed on a substrate; an RPG layer formed on the bottom DBR layer; a capping layer formed on the RPG mirror; an optical pump irradiating a pump beam onto a surface of the capping layer; and an external cavity mirror installed on an external surface of a stacked layer corresponding to the bottom DBR mirror. The RPG layer includes: a plurality of first barrier layers periodically formed on nodes of a standing wave and formed of a material having a larger energy band gap width than that of the pump beam; and a plurality of gain layers including a plurality of QW layers formed of InGaAs and disposed between the first barrier layers, and a plurality of second barrier layers disposed on upper and lower portions of the QW layers.

High power vertical external cavity surface emitting laser

A GaN series surface-emitting laser diode and a method for manufacturing the same are provided. The GaN series surface-emitting laser diode includes: an active layer; p-type and n-type material layers on the opposite sides of the active layer; a first-distributed Bragg reflector (DBR) layer formed on the n-type material layer; an n-type electrode connected to the active layer through the n-type material layer such that voltage is applied to the active layer for lasing; a spacer formed on the p-type material layer with a laser output window in a portion aligned with the first DBR layer, the spacer being thick enough to enable holes to effectively migrate to a center portion of the active layer; a second DBR layer formed on the laser output window; and a p-type electrode connected to the active layer through the p-type material layer such that voltage is applied to the active layer for lasing. The laser output window is shaped such that diffraction of a laser beam caused by the formation of the spacer can be compensated for.

GaN series surface-emitting laser diode having spacer for effective diffusion of holes between P-type electrode and active layer, and method for manufacturing the same

GaN series surface-emitting laser diode having spacer for effective diffusion of holes between p-type electrode and active layer, and method for manufacturing the same

Growing community of inventors

Gunpo-si, South Korea

Heon-su Jeon