Lg Electronics Inc.

Heon-Min Lee

Don-Hee Lee

Kwy-Ro Lee

Seh-Won Ahn

Hyo-Jin Nam

Young-Joo Eo

Jung-Heum Yun

Dong-Chun Kim

A method for manufacturing a poly-crystal silicon photovoltaic device using horizontal metal induced crystallization comprises the steps of forming at least one layer of an amorphous silicon thin film on a substrate, forming at least one groove of which depth is less than or equal to that of the thin film on the amorphous silicon thin film, and horizontally crystallizing the amorphous silicon thin film by forming a metal layer on an upper portion of the groove. Since a crystal shape and a growth direction of the photovoltaic device can be adjusted by the method, a poly-crystal silicon thin film for improving current flow can be formed at a low-temperature.

Method for manufacturing a poly-crystal silicon photovoltaic device using horizontal metal induced crystallization

A thin-film solar cell having a first solar cell layer with a plurality of unit cells including a photoelectric conversion layer that are connected in series; a second solar cell layer with a plurality of unit cells including a photoelectric conversion layer that are connected in series, and that has band gap energy different from the first solar cell layer and a threshold voltage coincident with the first solar cell layer; and an electrode connector, that connects the first solar cell layer with the second solar cell layer in parallel.

Thin-film solar cell and method of manufacturing the same

Method for fabricating a ferroelectric capacitor, including the steps of (1) foxing an etch stopper formed of any one of TiO,and RuO,a lower electrode, a ferroelectric layer, an upper electrode, and an etch mask layer formed of any one of Ti, Ru and Cr in succession on a substrate, (2) patterning the etch mask layer to a required form, (3) using the etch mask layer as a mask in etching the upper electrode, the ferroelectric layer, and the lower electrode at a time, to expose the etch stopper, and (4) removing the etch stopper and the etch mask layer, whereby allowing a simple and easy fabrication of the capacitor regardless of presence of steps.

Method for fabricating ferroelectric capacitor

Growing community of inventors

Seoul, South Korea

Heon-Min Lee