Samsung Electronics Co., Ltd.

Heon-kyu Lee

Kohji Kanamori

Jae-Hoon Jang

Jae-Duk Lee

Kwang-soo Kim

Shin-Hwan Kang

A vertical non-volatile memory device includes a substrate including a cell region; a lower insulating layer on the substrate; a lower wiring pattern in the cell region having a predetermined pattern and connected to the substrate through the lower insulating layer; and a plurality of vertical channel layers extending in a vertical direction with respect to a top surface of the substrate in the cell region, spaced apart from one another in a horizontal direction with respect to the top surface of the substrate, and electrically connected to the lower wiring pattern. The memory device also includes a plurality of gate electrodes stacked alternately with interlayer insulating layers in the cell region in the vertical direction along a side wall of a vertical channel layer and formed to extend in a first direction along the horizontal direction.

Growing community of inventors

Hwaseong-si, South Korea

Heon-kyu Lee