Cornell University

Instytut Wysokich Cisnien Polskiej Akademii Nauk

Henryk Turski

Debdeep Jena

Huili Grace Xing

Kazuki Nomoto

Czeslaw Skierbiszewski

Shyam Bharadwaj

Marcin Siekacz

Alexander Austin Chaney

Mateusz Hajdel

Mikolaj Zak

Mikolaj Chlipala

Krzesimir Nowakowski-Szkudlarek

Pawel Wolny

Krzesimir Szkudlarek

A device that includes a metal(III)-polar III-nitride substrate having a first surface opposite a second surface, a tunnel junction formed on one of the first surface or a buffer layer disposed on the first surface, a p-type III-nitride layer formed directly on the tunnel junction, and a number of material layers; a first material layer formed on the p-type III-nitride layer, each subsequent layer disposed on a preceding layer, where one layer from the number of material layers is patterned into a structure, that one layer being a III-nitride layer. Methods for forming the device are also disclosed.

Platforms enabled by buried tunnel junction for integrated photonic and electronic systems

Growing community of inventors

Warsaw, Poland

Henryk Turski