Sandisk Technologies Inc.

Sandisk 3d LLC

Henry Zhang

Tz-Yi Liu

Jingwen Ouyang

Yan Li

Toru Miwa

Minh H Nguyen

Po-Shen Lai

Yingchang Chen

Gopinath Balakrishnan

Hiroyuki Mizukoshi

Vijay Chinchole

Yibo Yin

Shigeki Shimomura

Ryuji Yamashita

Jayesh Pakhale

Spyridon Georgakis

A method for performing a read operation of a memory block of a read-only memory array, wherein the method comprises first enabling bit line precharge circuitry of the memory block, (thereby precharging one or more bit lines of the memory block to a first voltage level), enabling a word line of one or more addressed memory cells of the memory block, enabling a leakage current reduction circuit of the memory block, thereby generating across the addressed memory cells a first voltage differential equal to the first voltage level; subsequently discharging the addressed memory cells; disabling the word line of the one or more addressed memory cells; disabling the bit line precharge circuitry; and disabling the leakage current reduction circuit, thereby generating across the one or more addressed memory cells a second voltage differential that is equal to less than the first voltage differential.

Leakage reduction circuit for read-only memory (ROM) structures

Apparatuses, systems, methods, and computer program products are disclosed for a multicore on-die memory controller. An integrated circuit device includes an array of non-volatile memory cells and a microcontroller unit. A microcontroller unit includes a plurality of processing units. Different processing units perform different categories of tasks in parallel for an array of non-volatile memory cells.

Multicore on-die memory microcontroller

Apparatuses, systems, methods, and computer program products are disclosed for queuing storage operations. An integrated circuit memory element receives a storage operation command associated with a bank of storage locations of a memory element. An integrated circuit memory element queues a storage operation command for execution on a bank of storage locations by determining a storage location in a page register for data associated with the storage operation command. A storage location in a page register includes a subset of available storage locations in the page register. An integrated circuit memory element stores data associated with a storage operation command at a determined storage location in a page register.

Storage operation queue

Apparatuses, systems, and methods are disclosed for controlling a data path for non-volatile memory. An apparatus includes one or more memory die. A memory die includes a memory core. A memory core includes an array of non-volatile memory cells and an internal data pipeline. A memory die includes a buffer that stores data associated with storage operations for a memory core. A memory die includes an internal controller that communicates with a memory core to initiate storage operations. An internal controller may delay initiating a storage operation in response to determining that an internal data pipeline and a buffer are both full.

Data path control for non-volatile memory

A non-volatile memory system is disclosed that evaluates during a read before write operation whether to skip programming of portions of group of memory cells during a subsequent write operation. By evaluating skip information during a read before write operation, the write operation can be expedited. The additional overhead for evaluating skip information is consumed during the read before write operation. By performing a skip evaluation during the read before write operation, a full analysis of the availability of skipping programming for memory cells can be performed. Skip evaluations in different embodiments may be performed for entire bay address cycles, column address cycles, and/or sense amplifier address cycles. In some embodiments, some skip evaluations are performed during read before write operations while others are deferred to the write operation. In this manner, the number of data latches for storing skip information can be decreased.

Program cycle skip evaluation before write operations in non-volatile memory

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Saratoga, CA, United States of America

Henry Zhang