University of Missouri

Moxtronics, Inc.

Cryocrate LLC

Henry W White

Yungryel Ryu

Shen Zhu

Tae-seok Lee

Raghuraman Kannan

Kavita K Katti

Cathy Sue Cutler

Peter Koulen

Kattesh K Katti

Xu Han

An improved ultra-fast cooling system is disclosed for cryopreservation of biomaterials. The ultra-fast cooling system is designed to uniformly vitrify or partially vitrify biomaterials, including but not limited to, human biomaterials, proteins, peptides, cells, stem cells, antibodies, neurons, human tissue, organs, cornea, skin, retina, eggs, sperm, embryos, body fluids, blood, serum, lymph fluid, animal tissue, plant biomaterials, plant tissue, germ plasma, pollen, plant sap, and bioengineered tissue, without cryoprotectants or with a low concentration of cryoprotectants. Cooling rates are sufficient to uniformly cryopreserve biomaterials, and can be used in diagnostic cytology and biological cryofixation applications. Other materials also can be cooled uniformly, such as inorganic materials for processing.

Ultra-fast cooling system and methods of use

An example embodiment of a method for making gold nanoparticles includes steps of reacting a gold salt with a phosphino amino acid. Example phosphino amino acids include trimers, with a particular example being a trimeric amino acid conjugate containing one phosphino group. In an example method of the invention, the gold nanoparticles may be produced in timer periods of less than about 3 minutes, and at temperatures of less than about 30&#xb0; C. Other methods of the invention are directed to methods for stabilizing gold nanoparticles, and to methods for making gold nanochains.

Methods and articles for gold nanoparticle production

Semiconductor films and structures, such as films and structures utilizing zinc oxide or other metal oxides, and processes for forming such films and structures, are provided for use in metal oxide semiconductor light emitting devices and other metal oxide semiconductor devices, such as ZnO based semiconductor devices.

Films and structures for metal oxide semiconductor light emitting devices and methods

A hybrid beam deposition (HBD) system and methods according to the present invention utilizes a unique combination of pulsed laser deposition (PLD) technique and equipment with equipment and techniques that provide a radical oxygen rf-plasma stream to effectively increase the flux density of available reactive oxygen at a deposition substrate for the effective synthesis of metal oxide thin films. The HBD system and methods of the present invention further integrate molecular beam epitaxy (MBE) and/or chemical vapor deposition (CVD) techniques and equipment in combination with the PLD equipment and technique and the radical oxygen rf-plasma stream to provide elemental source materials for the synthesis of undoped and/or doped metal oxide thin films as well as the synthesis of undoped and/or doped metal-based oxide alloy thin films.

Hybrid beam deposition system and methods for fabricating metal oxide-ZnO films, p-type ZnO films, and ZnO-based II-VI compound semiconductor devices

An epitaxially layered structure with gate voltage bias supply circuit element for improvement in performance for semiconductor field effect transistor (FET) devices utilizes a structure comprised of a substrate, a first layer semiconductor film of either an n-type or a p-type grown epitaxially on the substrate, with the possibility of a buffer layer between the substrate and first layer film, an active semiconductor layer grown epitaxially on the first semiconductor layer with the conductivity type of the active layer being opposite that of the first semiconductor layer, with the active layer having a gate region and a drain region and a source region with electrical contacts to gate, drain and source regions sufficient to form a FET, an electrical contact on either the substrate or the first semiconductor layer, and a gate voltage bias supply circuit element electrically connected to gate contact and to substrate or first semiconductor layer with voltage polarity and magnitude sufficient to increase device performance. This epitaxially layered structure with gate voltage bias supply circuit element can be employed for improving the function and high frequency performance of semiconductor FET devices.

High performance FET devices

A process for preparing p-n or n-p junctions having a p-type oxide film is disclosed. In one embodiment, a p-type zinc oxide film has a net acceptor concentration of at least about 10acceptors/cm.

Process for preparing p-n junctions having a p-type ZnO film

A p-type oxide film and a process for preparing the film and p-n or n-p junctions is disclosed. In a preferred embodiment, a p-type zinc oxide film contains arsenic and is grown on a gallium arsenide substrate. The p-type oxide film has a net acceptor concentration of at least about 10 acceptors/cm , a resistivity of no greater than about 1 ohm-cm, and a Hall mobility of between about 0.1 and about 50 cm /Vs.

Zinc oxide films containing p-type dopant and process for preparing same

A p-type zinc oxide film and a process for preparing the film is disclosed. In a preferred embodiment, the p-type zinc oxide film contains arsenic and is grown on a gallium arsenide substrate. The p-type zinc oxide film has a net acceptor concentration of at least about 10 acceptors/cm , a resistivity of no greater than about 1 ohm-cm, and a Hall mobility of between about 0.1 and about 50 cm /Vs.

Process for preparing zinc oxide films containing p-type dopant

A p-type zinc oxide film and a process for preparing the film and p-n or n-p junctions is disclosed. In a preferred embodiment, the p-type zinc oxide film contains arsenic and is grown on a gallium arsenide substrate. The p-type zinc oxide film has a net acceptor concentration of at least about 10 acceptors/cm , a resistivity of no greater than about 1 ohm-cm, and a Hall mobility of between about 0.1 and about 50 cm /Vs.

Zinc oxide films containing P-type dopant and process for preparing same

Oxide films and process for preparing same

A p-type zinc oxide film and a process for preparing the film is disclosed. In a preferred embodiment, the p-type zinc oxide film contains arsenic and is grown on a gallium arsenide substrate. The p-type zinc oxide film has a net acceptor concentration of at least about 10,acceptors/cm,, a resistivity of no greater than about 1 ohm-cm, and a Hall mobility of between about 0.1 and about 50 cm,/Vs.

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Columbia, MO, United States of America

Henry W White