Fraunhofer-gesellschaft Zur Foerderung Der Angewandten Forschung E.v.

University of Virginia Patent Foundation

Ctf Solar Gmbh

Fraunhofer-ges. Zur Förderung Der Angewandten Forschung E.v.

Henry Morgner

Siegfried Schiller

Haydn N G Wadley

Klaus Goedicke

Volker Kirchhoff

Christoph Metzner

Fred Fietzke

Falk Milde

Derek Hass

Matthias Fahland

Manfred Neumann

Goesta Mattausch

Olaf Zywitzki

Bastian Siepchen

Jonathan Reschke

Jörg Kubusch

Nicolas Schiller

Bert Scheffel

Krishnakumar Velappan

Jens-Peter Heinss

Torsten Werner

Gösta Mattausch

Christian Drost

Steffen Straach

James F Groves

Rainer Labitzke

Steffen Günther

Bettina Späth

Haydn N Wadley

Daniel Hirsch

Christian Kraft

Frank-Holm Roegner

Ludwig Decker

Björn Meyer

Michael Junghähnel

Lars Klose

Lars Werner

A method for depositing a CdTe layer on a substrate in a vacuum chamber by means of physical gas phase deposition is provided. The substrate is heated to a coating temperature before the deposition process and then guided past a vessel in which CdTe is converted into a vapour state, a gaseous component with an increased pressure (compared to the vacuum in the vacuum chamber) flowing through at least one inlet, against the substrate surface to be coated, such that the gaseous component is adsorbed on the substrate surface to be coated before the substrate is guided past the at least one vessel.

Method for depositing a CdTe layer on a substrate

A plasma generation process that is more optimized for vapor deposition processes in general, and particularly for directed vapor deposition processing. The features of such an approach enables a robust and reliable coaxial plasma capability in which the plasma jet is coaxial with the vapor plume, rather than the orthogonal configuration creating the previous disadvantages. In this way, the previous deformation of the vapor gas jet by the work gas stream of the hollow cathode pipe can be avoided and the carrier gas consumption needed for shaping the vapor plume can be significantly decreased.

Coaxial hollow cathode plasma assisted directed vapor deposition and related method thereof

An apparatus for generating a hollow cathode arc discharge plasma, including two plasma sources, each including a hollow cathode and an electrode which is associated with the hollow cathode and which has an opening that extends through the electrode, wherein the hollow cathodes of the two plasma sources are connected to a pulse generator which generates a bipolar, medium-frequency pulsed voltage between the two hollow cathodes. Here, in each of the two plasma sources, the hollow cathode is connected in an electrically conducting manner, directly or with interconnection of at least one current direction limiting component, to the associated electrode.

Apparatus for generating a hollow cathode arc discharge plasma

Plasma deposition apparatus () and method that allows metal or nonmetal vapor () to be generated by electron-beam evaporation, guides that vapor using a noble gas stream (containing reactive gases in cases of reactive evaporation), ionizes the dense directed gas and vapor stream at working pressures above about 0.0001 mbar using a hollow cathode plasma arc discharge (), and conveys the ionized vapor and/or gas stream towards the substrate () for impact on the surface at energies varying from thermal levels (as low as about 0.05 eV) up to about 300 eV.

Process and apparatus for plasma activated depositions in a vacuum

Process for producing organically modified oxide, oxynitride or nitride

Process for ion-supported vacuum coating

Apparatus for plasma-assisted high rate electron beam vaporization

Growing community of inventors

Dresden, Germany

Henry Morgner