Lucent Technologies Inc.

Bell Telephone Laboratories

Advanced Technology Materials, Inc.

Henry Miles O'Bryan

John Thomson, Jr

Roderick Kent Watts

Karl Georg Hampel

Jeffrey F Roeder

John William Osenbach

Allan James Bruce

John Burnette MacChesney

Gregory T Stauf

Eliezer M Rabinovich

LeGrand G Van Uitert

Ofer Sneh

William James Minford

Howard Joseph Guggenheim

Tae Yong Kim

Michael D Evans

Aza E Mishkevich

Douglas A Herr

James Kevin Pluorde

The specification describes a phase shifting microstrip device in which the ground plane electrode is formed on a substrate surface and a film of ferroelectric material with a thickness less than 200 &mgr;m is formed over the ground plane electrode. The microstrip electrode is formed over the film of ferroelectric material to produce a microstrip device with an operating voltage of less than 200 volts.

Microstrip phase shifters

Optical devices using non-centric crystals, such as lithium niobate, and methods for making and using the devices, are provided. The devices provide improved temperature stability as compared to conventional devices using non-centric crystals. The improved temperature stability is provided by etching the surface of a non-centric crystal to a depth of less than about 300 angstroms. The devices and methods of the invention reduce the magnitude of change in bias voltage required to maintain an optical crystal at a pre-selected operating point.

Optical devices having improved temperature stability

The specification describes sputtering processes for the deposition of silicon dioxide films doped with high levels of oxides or other materials to alter the optical and/or electrical characteristics of the films. Sol gel methods are used to prepare composite sputtering targets of ultra fine mixtures of materials so the composition of the sputtered films replicate the composition of the target.

Deposition of highly doped silicon dioxide films

Ba--Sr--Ti-oxide dielectric material, with at least 60 atomic percent of the total content of the oxide being Ti, can have relatively high dielectric constant K (&gt;40 at 20.degree. C.) and relatively low second order voltage coefficient a.sub.2 of the dielectric constant (a.sub.2 &lt;100 PPM V.sup.2 at 20.degree. C.). In preferred embodiments the dielectric material has nominal composition (BA.sub.x Sr.sub.y Ti.sub.1--x--y)-oxide, with 1--x--y in the range 0.65-0.90, with both x and y greater than or equal to 0.05. Ba, Sr and Ti together typically comprise at least 99 atomic percent of the total metal content of the dielectric material.

Article comprising a capacitor with non-perovskite Sr-Ba-Ti oxide

A method of forming a via hole in a substrate includes forming an opening in a substrate thereby forming a slag and then heating the substrate to recombine the slag with the substrate.

Method of forming vias

Infrared detection and transmission apparatus are disclosed which incorporate an infrared transparent window consisting essentially of thorium fluoride. Due to high resistance to thermal shock, thorium fluoride window material may be used to advantage under extreme atmospheric conditions or for the transmission of infrared radiation at high power levels.

Infrared detection and transmission apparatus

Devices are described which utilize a low loss dielectric material. This dielectric material is unique in that it combines low dielectric loss with a high and temperature-stable dielectric constant. The material is made up of BaO and TiO.sub.2 and corresponds closely in composition to the compound Ba.sub.2 Ti.sub.9 O.sub.20. Devices utilizing this material are useful at a variety of frequencies, but are particularly advantageous in the microwave region above 0.5 GHz.

Devices using low loss dielectric material

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Plainfield, NJ, United States of America

Henry Miles O'Bryan