Asml Netherlands B.v.

Henry Megens

Richard Johannes Franciscus Van Haren

Paul Christiaan Hinnen

Andre Bernardus Jeunink

Hubertus Johannes Gertrudus Simons

Franciscus Bernardus Maria Van Bilsen

Hoite Pieter Theodoor Tolsma

Jacobus Burghoorn

Jeroen Huijbregtse

Sicco Ian Schets

Ramon Navarro Y Koren

Hermanus Gerardus Van Horssen

Allan Reuben Dunbar

Johny Rutger Schuurhuis

Brian Young Bok Lee

Maurits Van Der Schaar

Sanjaysingh Lalbahadoersing

Sanjay Lalbahadoersing

Paul Christiaan Van Hinnen

An alignment system for a lithographic apparatus has a source of alignment radiation; a detection system that has a first detector channel and a second detector channel; and a position determining unit in communication with the detection system. The position determining unit is constructed to process information from said first and second detector channels in a combination to determine a position of an alignment mark on a work piece, the combination taking into account a manufacturing process of the work piece. A lithographic apparatus has the above mentioned alignment system. Methods of alignment and manufacturing devices with a lithographic apparatus use the above alignment system and lithographic apparatus, respectively.

Alignment systems and methods for lithographic systems

A marker structure on a substrate for optical alignment of the substrate includes a plurality of first structural elements and a plurality of second structural elements. In use, the marker structure allows the optical alignment based upon providing at least one light beam directed on the marker structure, detecting light received from the marker structure at a sensor, and determining alignment information from the detected light, the alignment information comprising information relating a position of the substrate to the sensor.

Marker structure for optical alignment of a substrate, a substrate including such a marker structure, an alignment method for aligning to such a marker structure, and a lithographic projection apparatus

A method for manufacturing a marker structure including line elements and trench elements arranged in a repetitive order includes filling the trench elements with silicon dioxide and leveling the marker structure. A sacrificial oxide layer is grown on the semiconductor surface, and a first subset of the line elements is exposed to an ion implantation beam including a dopant species to dope and change an etching rate of the first subset. The substrate is annealed to activate the dopant species, and the semiconductor surface is etched to remove the sacrificial oxide layer and to level the first subset to a first level and to create a topology such that the first subset has a first level differing from a second level of a surface portion of the marker structure different from the first subset.

Marker for alignment of non-transparent gate layer, method for manufacturing such a marker, and use of such a marker in a lithographic apparatus

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Eindhoven, Netherlands

Henry Megens