Qualcomm Incorporated

Henry Laurel Sanchez

Hyunsuk Shin

Amit Gil

Hung Quoc Vuong

Laxminarayan Sharma

Removable memory card type detection systems and methods are disclosed. In one aspect, a removable memory card is inserted into a receptacle of a host. The host determines a type of removable memory card based upon either electrical or physical properties of the removable memory card. In this manner, if the host detects that the removable memory card possesses certain electrical or physical properties associated with a microSD card, the host determines that the removable memory card is a microSD type card. If the host detects that the removable memory card possesses certain electrical or physical properties associated with a UFS card, the host determines that the removable memory card is a UFS type card. By determining the card type based on detection of certain electrical or physical properties, aspects disclosed herein are able to distinguish between UFS and microSD cards without requiring an additional pin or card initialization time.

Removable memory card type detection systems and methods

Die stacking systems and methods are disclosed. In an embodiment, a semiconductor device includes a passivation surface and a conductive die receiving surface located in an opening of the passivation surface. The conductive die receiving surface has a surface area that is larger than a footprint of a second die that is electrically coupled to the conductive die receiving surface.

Die stacking system and method

An energy harvesting integrated circuit (IC) includes electrical connectors, each having a portion of a first material and a portion of a second material. The first and the second materials have a thermoelectric potential. The IC includes a trace of the first material coupled to the first material of each electrical connector, and a trace of the second material coupled to the second material of each electrical connector and the first trace. A portion of the second trace extends away from a portion of the first trace. The IC has charge storing elements coupled to the first and/or second traces. The first material and the second material are heated to create an electron flow from a thermal gradient between a first zone of the heated first and second materials and a second zone of the first and the second materials away from the first zone.

Growing community of inventors

Carlsbad, CA, United States of America

Henry Laurel Sanchez