Applied Materials, Inc.

Advanced Micro-fabrication Equipment, Inc. Asia

Other

Advanced Micro-fabrication Equipment Inc, Shanghai

Henry Ho

Steven Aihua Chen

Michael Xiaoxuan Yang

Yu Wen Chang

Karl Anthony Littau

Lee Luo

Shulin Wang

Bruce W Peuse

Steven Yencheng Chen

Steven T Li

Alexander N Lerner

Ming Xi

Chen-An Chen

Gerald Zheyao Yin

Anh Ngoc Nguyen

Aihua Chen

Lily L Pang

Ying Yu

AiHua Chen

Andrew J Ruspini

Mei Yin Chang

Dmitry Lubomirsky

Tetsuya Ishikawa

Yong Jiang

Tuqiang Q Ni

Son Truong Nguyen

Chien-Teh Kao

Mark Yam

Arulkumar P Shanmugasundram

Xiaoxiong Yuan

Allen L D'Ambra

Alexander Tam

Yeuk-Fai Edwin Mok

Anqing Cui

Jinyuan Chen

Xianzhi Tao

Russell C Ellwanger

Bernardo Donoso

Xiaoliang Jin

Yevgeniy Rabinovich

Li Fu

Binh Hoa Tran

Ning Zhou

Svetlana Sherman

Chiliang L Chen

Zhiyou Du

Abril Cabreros

Eric B Britcher

Binh Bui

Errol A C Sanchez

Alexander M Rubinchik

Yijun Liu

Kuo-Chun Wu

Qing Lv

The present application provides a gas showerhead including a gas distribution and diffusion plate and a water cooling plate, the gas distribution and diffusion plate includes several columns of first gas diffusion passages connecting to a first reactant gas source and several columns of second gas diffusion passages connecting to a second reactant gas source; the water cooling plate having cooling liquid passages is arranged below the gas distribution and diffusion plate, and the water cooling plate is provided with first gas outlet passages provided for the reactant gas in the first gas diffusion passages to flow out and second gas outlet passages provided for the reactant gas in the second gas diffusion passages to flow out, so as to isolatedly feed at least two reactant gases into a reaction chamber.

Gas showerhead, method for making the same and thin film growth reactor

A plasma chamber is constructed to have a chamber body defining therein a plurality of process stations. A plurality of rotating substrate holders are each situated in one of the process stations and a plurality of in-situ plasma generation regions are each provided above one of the substrate holders. A plurality of quasi-remote plasma generation regions are each provided above a corresponding in-situ plasma generation region and being in gaseous communication with the corresponding in-situ plasma generation region. An RF energy source is coupled to each of the quasi-remote plasma generation regions.

Multi-station plasma reactor with multiple plasma regions

A semiconductor work piece processing reactor is described and which includes a processing chamber defining a deposition region; a pedestal which supports and moves a semiconductor work piece to be processed within the deposition region of the processing chamber; and a gas distribution assembly mounted within the processing chamber and which defines first and second reactive gas passageways which are separated from each other, and which deliver two reactant gases to a semiconductor work piece which is positioned near the gas distribution assembly.

Gas distribution assembly for use in a semiconductor work piece processing reactor

A method and apparatus for cleaning the bevel of a semiconductor substrate. The apparatus generally includes a cell body having upstanding walls and a fluid drain basin, a rotatable vacuum chuck positioned centrally positioned in the fluid drain basin, and at least 3 substrate centering members positioned at equal radial increments around the rotatable vacuum chuck. The substrate centering members include a vertically oriented shaft having a longitudinal axis extending therethrough, a cap member positioned over an upper terminating end of the shaft, a raised central portion formed onto the cap member, the raised central portion having a maximum thickness at a location the coincides with the longitudinal axis, and a substrate centering post positioned on the cap member radially outward of the raised central portion, an upper terminating end of the substrate centering post extending from the cap member to a distance that exceeds the maximum thickness. The apparatus further includes a centering actuation mechanism in communication with the substrate centering posts, and a fluid dispensing arm pivotally connected to the cell body, the fluid dispensing arm being configured to dispense a processing fluid onto a first side of the substrate.

Integrated bevel clean chamber

Embodiments of the invention generally provide an electrochemical plating system. The plating system includes a substrate loading station positioned in communication with a mainframe processing platform, at least one substrate plating cell positioned on the mainframe, at least one substrate bevel cleaning cell positioned on the mainframe, and a stacked substrate annealing station positioned in communication with at least one of the mainframe and the loading station, each chamber in the stacked substrate annealing station having a heating plate, a cooling plate, and a substrate transfer robot therein.

Multi-chemistry plating system

An apparatus that includes a pumping plate having a skirt, where the skirt contains a number of holes and a wafer access slot, and where the number of holes are sized and positioned to provide uniform heating of a susceptor.

Emissivity-change-free pumping plate kit in a single wafer chamber

An apparatus for wafer processing that includes a wafer reaction chamber containing a heater within, the heater including an interior volume containing at least one heating element, a fluid inlet port, and a fluid vent port positioned to vent the fluid outside the wafer reaction chamber. Additionally, the interior volume has a seal that isolates it from the wafer reaction chamber.

Method to isolate multi zone heater from atmosphere

The invention provides methods and apparatuses of forming a silicon nitride layer on a semiconductor wafer. A semiconductor wafer is located on a susceptor within a semiconductor processing chamber. A carrier gas, a nitrogen source gas, and a silicon source gas are introduced into the semiconductor processing chamber and a semiconductor wafer is exposed to the mixture of gases at a pressure in the chamber in the range of approximately 100 to 500 Torr.

Method of forming a silicon nitride layer on a substrate

A heating apparatus including a stage comprising a surface having an area to support a wafer and a body, a shaft coupled to the stage, and a first and a second heating element. The first heating element is disposed within a first plane of the body of the stage. The second heating element is disposed within a second plane of the body of the stage at a greater distance from the surface of the stage than the first heating element. A reactor comprising a chamber, a resistive heater, a first temperature sensor, and a second temperature sensor. A resistive heating system for a chemical vapor deposition apparatus comprising a resistive heater. A method of controlling the temperature in a reactor comprising providing a resistive heater in a chamber of a reactor, measuring the temperature with at least two temperature sensors, and controlling the temperature in the reactor by regulating a power supply to the first heating element and the second heating element according to the temperature measured by the first temperature sensor and the second temperature sensor.

Multi-zone resistive heater

A heating apparatus including a stage comprising a surface having an area to support a wafer and a body, a shaft coupled to the stage, and a first and a second heating element. The first heating element is disposed within a first plane of the body of the stage. The second heating element is disposed within a second plane of the body of the stage at a greater distance from the surface of the stage than the first heating element, and the second heating element is offset from the first heating element in a plane substantially parallel to at least one of the first plane and the second plane.

A method and apparatus for directing a process gas through a processing apparatus, such as a vapor deposition chamber. The apparatus comprises a pumping plate for a processing chamber having an annular body member wherein said body member has a first portion and a second defining a circumferential edge and a central opening. The first portion comprises a sidewall of the circumferential edge having a plurality of circumferentially spaced through holes and the second portion has comprises a lateral portion that protrudes from the circumferential edge, such that, in a processing chamber, the first portion defines a first gas flow region comprising the central opening and a second gas flow region comprising the lateral portion of the second portion.

Method and apparatus for directing constituents through a processing chamber

Provided herein is an emissivity-change-free pumping plate kit used in a single wafer chamber. This kit comprises a top open pumping plate, and optionally a skirt and/or a second stage choking plate. The skirt may be installed around the wafer heater, underneath the wafer heater, or along the chamber body inside the chamber. The choking plate is installed downstream of the top open pumping plate along the purge gas flow. Also provided is a method of preventing emissivity change and further providing optimal film thickness uniformity during wafer processing by utilizing such kit in the chamber.

Methods and apparatuses of forming a film on a substrate including introducing a pretreatment material into a processing chamber sufficient to form a film as a portion of an inner surface of the processing chamber to inhibit outgassing from that portion of the chamber, introducing a substrate into the chamber, and forming a film on the substrate.

Method of forming a film in a chamber and positioning a substitute in a chamber

An apparatus of a reactor or processing chamber comprising a chamber having a resistive heater disposed within a volume of the chamber, including a stage having a surface area to support a substrate such as a wafer and a body including at least one heating element, a shaft coupled to the body, a plurality of temperature sensors coupled to the chamber, each configured to measure a temperature at separate points associated with the surface area of the stage, and a motor coupled to the shaft and configured to rotate the resistive heater about an axis through the shaft. In this manner, the temperature sensors may measure a temperature at separate points of the surface area of the stage. A method of rotating a shaft and measuring a plurality of temperatures over the surface area of the stage or over a wafer seated on the stage with the plurality of temperature sensors.

Heater temperature uniformity qualification tool

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San Jose, CA, United States of America

Henry Ho