Memc Electronic Materials, Inc.

Sunedison, Inc.

Globalwafers Co., Ltd.

Sunedison Semiconductor Limited (uen201334164h)

Sunedison Semiconductor Limited

Henry Frank Erk

Alexis Grabbe

Puneet Gupta

Guoqiang (David) Zhang

Roland R Vandamme

Yun-Biao Xin

Eugene R Hollander

Sasha Joseph Kweskin

Thomas E Doane

Jing Chai

Ralph V Vogelgesang

Judith A Schmidt

David Zhang

Jeffrey Louis Libbert

Shawn George Thomas

Peter D Albrecht

Charles Robert Lottes

Guoqiang David Zhang

Ronald D Bartram

Mark G Stinson

Dennis Buese

Mick Bjelopavlic

Kan-Yin Ng

Stephen Wayne Hensiek

Mayank Bulsara

Robert J Walsh

James Raymond Capstick

Ichiro Yoshimura

Giovanni Negri

Michele Haler

Darrel M Harris

Ashley Samuel Hull

Zhijian Pei

Judith Ann Schmit

Sharon Brumer

Jozef G Vermeire

Gregory Potts

Thomas Eugene Doane

Judith Ann Schmidt

Tom Doane

Anca Stefanescu

James Jose

Gene Hollander

Kanyin Ng

Charles R Lottes

Judy A Schmidt

A method is provided for preparing a semiconductor-on-insulator structure comprising a step of high pressure bonding.

Method of manufacturing a semiconductor on insulator structure by a pressurized bond treatment

Methods for removing an oxide film from a silicon-on-insulator structure are disclosed. The oxide may be stripped from a SOI structure before deposition of an epitaxial silicon thickening layer. The oxide film may be removed by dispensing an etching solution toward a center region of the SOI structure and dispensing an etching solution to an edge region of the structure.

Methods for preparing a SOI structure

Methods for removing an oxide film from a SOI structure and methods for preparing a SOI structure

A method is provided for preparing a semiconductor-on-insulator structure comprising a multilayer dielectric layer.

Method of manufacture of a semiconductor on insulator structure

Methods and systems for producing silane that use electrolysis to regenerate reactive components therein are disclosed. The methods and systems may be substantially closed-loop with respect to halogen, an alkali or alkaline earth metal and/or hydrogen.

Systems for producing silane

Methods for producing silane

Fluidized bed reactor systems and distributors are disclosed as well as processes for producing polycrystalline silicon from a thermally decomposable silicon compound such as trichlorosilane. The processes generally involve reduction of silicon deposits on reactor walls during polycrystalline silicon production by use of a silicon tetrahalide.

Fluidized bed reactor systems and distributors for use in same

The present disclosure generally relates to the manufacture of silicon wafers, and more particularly to edge etching apparatus and methods for etching the edge of a silicon wafer.

Methods for etching the edge of a silicon wafer

Edge etched silicon wafers

A process for etching silicon wafers using a caustic etchant in the form of an aqueous solution comprising water, a hydroxide ion source, and a chelating agent. The process produces silicon wafers substantially free from diffused metal ions.

Silicon wafer etching compositions

Semiconductor wafers have a front surface, a back surface, a notch, and an edge. A method of polishing a wafer includes polishing at least one of the surfaces and the notch of the wafer using a polishing pad and slurry. At least one surface of the wafer is cleaned of residual slurry. The cleaned surface is grasped by applying a vacuum to the cleaned surface of the wafer using a vacuum chuck. Edge of the wafer is polished using a pad and slurry while the wafer is grasped by the vacuum chuck.

Method of polishing a semiconductor wafer

Growing community of inventors

St. Louis, MO, United States of America

Henry Frank Erk