Umicore Ag & Co Kg

Henrik Schumann

Ralf Karch

Angelino Doppiu

Eileen Woerner

Annika Frey

Wolf Schorn

Nicholas Rau

Jörg Sundermeyer

Joerg Sundermeyer

Andreas Rivas Nass

Metal complexes of formula (I) are described:[M(L)(L)(hydra)]  formula (I)

Metal complexes for gas-phase thin-film deposition

The invention relates to compounds in accordance with the general formula [Ru(arene)(R&#x2014;N&#x2550;CR&#x2014;CR&#x2550;N&#x2014;R)] or [Ru(arene)((R,R)N&#x2014;N&#x2550;CR&#x2014;CR&#x2550;N&#x2014;N(R,R))]. In this case, arene is selected from the group consisting of mononuclear and polynuclear arenes and heteroarenes. R, R, RH, Rand R-Rare independently selected from the group consisting of H, an alkyl radical (C1-C10) and an aryl radical. It further relates to methods for the production of these compounds, compounds obtainable according to these methods, their use and a substrate having on a surface thereof a ruthenium layer or a layer containing ruthenium. In addition, the invention relates to a method for producing compounds [Ru(arene)X]2, wherein arene is selected from the group consisting of mononuclear and polynuclear arenes and X=halogen, compounds of this type obtainable according to this method, and their use. The aforementioned ruthenium(O) compounds can be produced in a simple, cost-effective and reproducible manner with a high degree of purity and good yield. Due to their high degree of purity, they are suitable for use as ruthenium(O) precursors.

Organometallic compounds for the manufacture of a semiconductor element or electronic memory

Growing community of inventors

Weinbach, Germany

Henrik Schumann