Sensonor Asa

Infineon Technologies Ag

Infineon Technologies Sensonor As

Sensonor As

Henrik Jakobsen

Terje Kvisteroey

Terje Kvisteroy

Gjermund Kittilsland

Daniel Lapadatu

Asgeir Nord

Terju Kvisteroy

Svein Moller Nilsen

Terje Kvistero Slashedy

Timothy Lommasson

Soheil Habibi

A micro mechanical vacuum sensor for determining the pressure within a cavity of a micro mechanical device is provided. The sensor comprises a substrate, at least one electrically conductive support member connected to the substrate, and a thermally resistive layer supported by the at least one support member and spaced from the substrate by the support member to provide a space between the thermally resistive layer and the substrate. The sensor is arranged such that the thermally resistive layer is substantially thermally insulated from the substrate. The sensor is further arranged to be driven such that the pressure within the cavity is determined by a temperature value sensed by the sensor.

Vacuum sensor

A micromechanical pressure sensing device includes a silicon support structure, which is configured to provide a plurality of silicon support beams. The device further includes one or more diaphragms attached to and supported by the support beams, and at least one piezoresistive sensing device, which is buried in at least one of the support beams. The piezoresistive sensing device is arranged to sense a strain induced in the silicon support structure, the strain being induced by a fluid in contact with the one or more diaphragms, to determine the pressure acting on the one or more diaphragms.

Micromechanical pressure sensing device

A method for producing a multi-layer device. The method initially providing a substrate which comprises a support region for supporting an electrical component, then forming an electrically conductive bond layer on a surface of the substrate. The bond is configured to surround the region for supporting the component. The next step in the method is to provide an encasing layer in contact with the bond layer, such that the component is encased between the substrate and the encasing layer. The final step involves bonding the encasing layer to the bond layer to form a sealed cavity which encloses the component. Further, a multi-layer device is provided. The device comprises a substrate, at least one electrical component which is located on the substrate, an electrically conductive bond layer and an encasing layer. The bond layer is formed on the substrate and surrounds the electrical components and the encasing layer is bonded to the bond layer to form a sealed cavity encasing the components therein.

Multi-layer device and method for producing the same

A capacitive-type pressure sensor comprising a glass plate having an electrode formed thereon. A diaphragm is formed from a semiconductor material and bonded to the glass substrate to define an enclosed cavity containing at least a portion of the electrode, to thereby define a capacitive element, through which, in use, an electrical signal may be passed to determine a capacitance thereof which is indicative of the pressure to be determined.

Pressure sensor

Micro-electromechanical devices

A pedestal structure and its fabrication method stress release assembly of micromechanical sensors, in particular acceleration sensor, angular rate sensors, inclination sensors or angular acceleration. At least one silicon seismic mass is used as sensing element. The at least one silicon seismic mass is joined to the silicon frame via at least one assembly pedestal, the surface of which is bonded to a covering wafer, either glass or silicon.

Micromechanical device

A method of manufacturing an angular-rate sensor by fabricating components of the angular-rate sensor on a silicon substrate, the components of the angular rate sensor including one or more masses, a support beam and buried conductors. Detection means are provided and the components are sealed in a cavity between a first glass plate and a second glass plate by anodic bonding. This enables angular rate sensors to be fabricated using low cost silicon wafers.

Method for manufacturing an angular rate sensor

A micromechanical acceleration switch of silicon or similar materials, comprising a resilient electrode element, a proof mass, a housing and a spring element connecting the electrode element and the proof mass to the housing. The electrode element is mechanically connected adjacent to the proof mass. The proof mass has its centre of gravity located at a given distance from the axis through the spring element, so that when the proof mass is pivoting about the axis of the spring element in response to an externally applied acceleration, with a component in a direction parallel with the first axis. The electrode element also pivots about this axis. The pivot angle being essentially proportional to the magnitude of this component of the acceleration. The resilient electrode element has a mass considerably smaller than the proof mass, and is provided with at least one electrical contact point giving electrical contact and co-operation with corresponding contact areas in said switch housing at a given pivot angle of the electrode element.

Micromechanical acceleration switch

A force sensor device for sensing seismic force due to changes in acceleration or pressure, comprising mass-spring system formed by a resonant flexible plate forming system mass and suspended from a rigid frame by means of at least two beams forming system springs and located at different sides of the plate, the plate, frame and beams being made of a silicon. A vibration excitation device upon application of electric signals at an elected one of a plurality of specific frequencies interacts with the plate to create a corresponding specific vibration mode therein, and a detection device detects any vibration frequency change in the plate due to interaction between a stress field thereon caused by the seismic force and a stress field thereon caused by the vibration mode.

Force sensor device

This invention relates to a method for making sealed cavities on silicon wafer surfaces by anodic bonding and with electrically insulated conductors through the sealing areas to connect functional devices inside the cavities to electrical terminals outside said cavities. Said conductors are provided by the use of doped buried crossings in a single crystal silicon substrate, thereby also allowing different kinds of integrated silicon devices, e.g. sensors to be made. Further, the invention relates to a device made by the novel method.

Growing community of inventors

Horten, Norway

Henrik Jakobsen