Imec Vzw

Henricus Philipsen

Quoc Toan Le

Frank Holsteyns

A method for manufacturing a semiconductor structure comprises providing a substrate that comprises a semiconductor layer and a filling material above the semiconductor layer. The filling material defines a plurality of trenches in a surface opposite the substrate. Feature material fills each trench and is selectively etched to form a pattern of recessed features. The substrate is then exposed to a first ambient environment that increases the etch resistance of the pattern of recessed features to an etchant that facilitates etching of a layer material within the trench that is arranged between the feature material and the filling material, to thereby modify at least an upper part of the pattern of recessed features. The layer material is partially etched with the etchant to form a recessed layer such that the layer material still remains between the filling material and the pattern of recessed features. The substrate is exposed to a second ambient environment that at least partially reverses modification of the upper part of the pattern of recessed features.

Method of manufacturing a semiconductor structure

A method for etching one or more entities on a semiconductor structure, each entity being made of a material selected from metals and metal nitrides is provided. The method includes the steps of: (a) oxidizing by electrolysis, at a current of at least 0.1 A, a precursor solution comprising chloride anions at a concentration ranging from 0.01 mol/l to 1.0 mol/l, thereby forming an etching solution; (b) providing a semiconductor structure having the one or more entities thereon; and (c) etching at least partially the one or more entities by contacting them with the etching solution.

Etching using an electrolyzed chloride solution

An oxygen-free or oxygen-poor solution for the electroless deposition of a platinum group metal is described. The solution includes a ruthenium (II) amine complex having a first oxidation potential, and a platinum group metal compound having a reduction potential larger than the opposite of the oxidation potential of the ruthenium (II) amine complex.

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Leuven, Belgium

Henricus Philipsen