Koninklijke Philips Corporation N.v.

U.S. Philips Corporation

Henricus Godefridus Rafael Maas

Ronald Dekker

Theodorus Martinus Michielsen

Richard Jozef Maria Waelen

Anco Heringa

Jan Willem Slotboom

Lukas Leyten

Freerk Van Rijs

Cornelis Eustatius Timmering

Wolfgang Schnitt

Frank Cornelis Penning

Maria Henrica Wilhelmina Antonia Van Deurzen

Holger Schligtenhorst

Wilhelmus Mathias Clemens Dolmans

Andreas Gakis

Hauke Pohlmann

Catharina Huberta Henrica Emons

Antonius Johannes Janssen

Ingrid Annemarie Rink

Pascal Henri Leon Bancken

Johann-Heinrich Fock

Martin Schaefer

Michael Burnus

A method for bonding two plate-shaped objects () with an adhesive which is cured by ultraviolet light irradiation and by heating. The two plate-shaped objects () with the adhesive in between are transported into a cure chamber () comprising an ultraviolet lamp () and a heating element (). A movable heat-shielding member () is temporary present between the objects () and the heating element () during at least the first part of the irradiation treatment. Preferably, the heat-shielding member () is positioned outside the cure chamber () during a part of the cure treatment.

Device for bonding two plate-shaped objects

A method for bonding two plate-shaped objects () with an adhesive which is cured by ultraviolet light irradiation and by heating. The two plate-shaped objects () with the adhesive in between are transported into a cure chamber () comprising an ultraviolet lamp () and a heating element (). A moveable heat-shielding member () is temporary present between the objects () and the heating element () during at least the first part of the irradiation treatment. Preferably, the heat-shielding member () is positioned outside the cure chamber () during a part of the curve treatment.

Method and a device for bonding two plate-shaped objects

A simple method of manufacturing a magnetic head having a head face and including a planar magnetic coil () which extends parallel to the head face. According to the method, the magnetic coil is formed at a first side of a first substrate (). Thereafter, the first substrate provided with the magnetic coil is adhered with its first side to a side of a second substrate, whereafter material of the first substrate is removed from a second side of the first substrate (), the second side being turned away from the first side, in order to form the head face, in such a manner that the magnetic coil is situated near to the head face.

Method of manufacturing a magnetic head having a planar coil

A method of examining a wafer of crystalline semiconductor material by means of X-rays, in which method a surface of the wafer is scanned by means of an X-ray beam and secondary radiation generated by said X-ray beam is detected. Prior to the examination the surface of the wafer which is to be scanned by the X-ray beam during the examination is glued to a substrate, after which crystalline semiconductor material is removed at the side which is then exposed, removal taking place as far as the top layer which adjoins the surface. The top layer can thus be examined without the examination being affected by crystal defects or impurities present in layers of the wafer which are situated underneath the top layer.

Method of examining a wafer of semiconductor material by means of X-rays

Flexible integrated monolithic circuit

A method of manufacturing a piezoelectric filter with a resonator comprising a layer of a piezoelectric material ( ) which is provided with an electrode ( ) on either side, which resonator is situated on an acoustic reflector layer ( ) formed on a surface ( ) of a carrier substrate ( ). In the method, the layer of piezoelectric material ( ) is provided on a surface ( ) of an auxiliary substrate ( ), after which a first electrode ( ) is formed on the layer of piezoelectric material ( ). The acoustic reflector layer ( ) is provided on and next to the first electrode ( ), and the structure thus formed is secured with the side facing away from the auxiliary substrate ( ) on the carrier substrate ( ). The auxiliary substrate ( ) is removed and a second electrode ( ) situated opposite the first electrode ( ) is provided.

Method of manufacturing a piezoelectric filter with an acoustic resonator situated on an acoustic reflector layer formed by a carrier substrate

The invention relates to an essentially discrete semiconductor device comprising a semiconductor body ( ) having a first, preferably bipolar, transistor (T ) with a first region ( ) forming a collector ( ) of T , and a second, preferably also bipolar, transistor (T ) with a second region ( ) forming a collector ( ) of T , which transistors (T , T ) are in a cascode configuration wherein the collector ( ) of T is connected to the emitter ( ) of T . Such a device cannot suitably be used in a base station for mobile communication. According to the invention, the first region ( ) and the second region ( ) are positioned next to each other within a semiconductor region ( ), a part of which situated below the first region ( ) is provided with a higher doping concentration at the location of T . In this way, T has a low collector-emitter breakdown voltage and a high cutoff frequency, whereas for T said voltage and frequency are, respectively, high(er) and low(er). The resultant device is very suitable, on the one hand, for a high voltage application, for example 28 V, and a high power application, for example 100 W and, on the other hand, the device can still operate at a very high speed and hence is very suitable for the above application. Moreover, the device can be manufactured very easily using a method according to the invention. Preferably, the device is rendered suitable for surface mounting, and the semiconductor body is attached to an isolating substrate ( ), while the parts thereof that are situated outside T and T are removed.

Semiconductor device and method of manufacturing same

A method of manufacturing a semiconductor device including semiconductor elements having semiconductor zones ( ) formed in a top layer ( ) of a silicon wafer ( ) situated on a buried insulating layer ( ). In this method, a first series of process steps are carried out, commonly referred to as front-end processing, wherein, inter alia, the silicon wafer is heated to temperatures above 700&deg; C. Subsequently, trenches ( ) are formed in the top layer, which extend as far as the buried insulating layer and do not intersect pn-junctions. After said trenches have been filled with insulating material ( ), the semiconductor device is completed in a second series of process steps, commonly referred to as back-end processing, wherein the temperature of the wafer does not exceed 400&deg; C. The trenches are filled in a deposition process wherein the wafer is heated to a temperature which does not exceed 500&deg; C. In this manner, a semiconductor device can be made comprising semiconductor elements having very small and shallow semiconductor zones.

Method of manufacturing a semiconductor device comprising semiconductor elements formed in a toplayer of a silicon wafer situated on a buried insulating layer

Semiconductor device

Method of producing a schottky varicap

A method of manufacturing a hybrid integrated circuit comprising a semiconductor element ( ) and a piezoelectric filter ( ), which are situated next to each other and connected to a carrier substrate ( ). The semiconductor element comprises semiconductor regions ( ) which are formed in a silicon layer ( ); the piezoelectric filter comprises an acoustic resonator ( ) which is situated on an acoustic reflector layer ( ), which acoustic resonator comprises a layer of piezoelectric material ( ), a first electrode ( ) situated between the layer of piezoelectric material and the acoustic reflector layer, and a second electrode ( ) which is situated on the opposite side of the piezoelectric layer and faces the first electrode. In the method, the semiconductor element is formed on the first side ( ) of a silicon wafer ( ). On the same side of this wafer, also the layer of piezoelectric material and the first electrode are formed, after which the surface is covered with the acoustic reflector layer. Subsequently, an adhesive layer ( ) is used to attach the structure thus formed with the acoustic reflector layer to the carrier substrate. Finally, at the location of the filter, silicon is removed from the second side of the wafer, and the comparatively thick acoustic reflector need not be patterned so that underlying features cannot be damaged during etching said reflector layer.

Method of manufacturing a hybrid integrated circuit comprising a semiconductor element and a piezoelectric filter

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Eindhoven, Netherlands

Henricus Godefridus Rafael Maas