U.S. Philips Corporation

Koninklijke Philips Corporation N.V.

Henricus G R Maas

Ronald Dekker

Raymond J E Hueting

Cornelis Eustatius Timmering

Erwin A Hijzen

Derk Jan Adelerhof

Mark A De Samber

Maria H W A Van Deurzen

Stienke De Jager

Myron W L Seto

Cornelius E Timmering

A thin-film magnetic head has a semiconductor substrate in which there is an integrated circuit, and on which a magnetic layer structure is arranged. During manufacturing the integrated circuit is formed on one side of the semiconductor substrate, and that side of the semiconductor substrate is then secured to a carrier body by a securing layer. The substrate may then be ground or etched to a thickness less than 35&mgr;m before forming the magnetic layer structure on the opposite side. Securing to the carrier body prevents deformation of the layer structure during manufacturing, so that the resulting head has reproducible properties. Preferably a support body is secured over the layer structure. The head face is then formed such that the layer structure and the support and carrier bodies terminate in it.

Magnetic head with integrated circuit on a rigid body

A trench-gate semiconductor device, for example a MOSFET or IGBT, of compact geometry is manufactured with self-aligned masking techniques in a simple process with good reproducibility. The source region ( ) of the device is formed by introducing dopant ( ) into an area of the body region ( ) via a mask window ( ), diffusing the dopant to form a surface region ( ) that extends laterally below the mask ( ) at a distance (d) beyond the masking edge ( ) of the window ( ), and then etching the body ( ) at the window ( ) to form a trench ( ) for the trench-gate ( ) with a lateral extent (y) that is determined by the etching of the body ( ) at the masking edge ( ) of the window ( ). A portion of the surface region ( ) is left to provide the source region ( ) adjacent to the trench ( ). The invention permits the etch edge definition for the trench ( ) to be better controlled by using the masking edge ( ) of a well-defined mask ( ), as compared with the less well defined edges that tend to result from the use of a side-wall extension in prior-art processes.

Manufacture of trench-gate semiconductor devices

In the manufacture of semiconductor devices that have an electrode (,) in an insulated trench (,), for example a trench-gate MOSFET, process steps are performed to line the trench walls with a lower insulating layer (,) in a lower part of the trench and with a thicker upper insulating layer (,) in an upper part of the trench. The steps include: (a) etching the trench (,); (b) providing the lower insulating layer (,) on the trench walls; (c) depositing on the lower insulating layer (,) a further layer (,) of a different material; (d) depositing on the further layer (,) a filler material (,) that is of a different material from the further layer (,); (e) etching away the further layer (,) from the upper part of the trench walls while using the filler material (,) as an etchant mask, so as to form a space (,) adjacent to the upper part of the trench walls while leaving the further layer (,) in the lower part of the trench; and (f) providing the thicker upper insulating layer (,) in the space (,) adjacent to the upper part of the trench walls.

Trench semiconductor device manufacture with a thicker upper insulating layer

A method of manufacturing enveloped semiconductor devices, in which use is made of a slice of a semiconductor material which is provided on its first side with an intermediate layer of an insulating material on which a top layer of a semiconductor material is formed, semiconductor elements are formed in the top layer, paths of the slice's surface situated on this side being left clear between the semiconductor elements, and the top layer is removed from the insulating intermediate layer at the location of the free paths. A metallization with connection electrodes extending as far as the free paths are formed on the first side of the slice, the slice is glued with its first side onto a transparent insulating supporting body, semiconductor material is removed from the second side of the slice facing away from the first side, and the slice thus reduced in thickness is provided on its second side with a layer of an insulating material. Grooves are formed in the supporting body, at the location of the free paths, which grooves intersect the connection electrodes of the metallization and extend into the layer of insulating material provided on the second side of the slice, conductor tracks are formed on the supporting body, which extend in the grooves so as to make contact with the connection electrodes intersected in the grooves, and the slice is divided, along the grooves, into separate semiconductor devices enveloped by the supporting body and the insulating layer provided on the second side.

Method of manufacturing semiconductor devices with &ldquo;chip size package&rdquo;

A thin film semiconductor device includes a glass supporting body having thereon an insulating substrate which is attached thereto by a layer of adhesive material. On the surface of the substrate facing the supporting body is a layer of semiconductor material which includes therein a semiconductor element, such surface further having thereon a metalization pattern of conductor tracks. An insulating layer is additionally provided between the metalization pattern and the adhesive layer, and has a dielectric constant &egr;,below 3 and a thickness in the range of approximately 20 &mgr;m to 60 &mgr;m. By virtue of such additional layer, parasitic capacitanees between the metalization pattern and an envelope in which the device is included or a printed circuit board on which the device is mounted are reduced substantially, thereby reducing the power consumption of the device.

Semiconductor device comprising a glass supporting body onto which a substrate with semiconductor elements and a metalization is attached by means of an adhesive

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Eindhoven, Netherlands

Henricus G R Maas