U.S. Philips Corporation

Henricus G Maas

Ronald Dekker

Johannes A Appels

Johannes W Van Der Velden

Wilhelmus T Van Den Einden

Jan W Slotboom

Armand Pruijmboom

Francois M Klaassen

Peter H Kranen

Martinus P Versleijen

Marguerite M Van Iersel-Schiffmacher

Dirk J Gravesteijn

Roland A Van Es

Steffen Wilhelm Hahn

Maria H Van Deurzen

Jan Haisma

Jacobus J Ruigrok

Gerardus H Somers

Lambertus Postma

Theodorus Martinus Michielsen

Wilhelmus J Josquin

Geert J Davids

Alfred H Van Ommen

Kazimierz Osinski

Albertus T Van De Goor

Johanna M Van Rooij-Mulder

Date J Noorlag

Kazimierz Osinki

Martinus C Koolen

A method of manufacturing a semiconductor device which starts with a semiconductor wafer (1) which is provided with a layer of semiconductor material (4) lying on an insulating layer (3) at a first side (2). Semiconductor elements (5) and conductor tracks (14) are formed on this first side (2) of the semiconductor wafer (1). Then the semiconductor wafer (1) is fastened with this first side (2) to a support wafer (15), and material (18) is removed from the semiconductor wafer (1) from its other, second side (17) until the insulating layer (3) has been exposed. The method starts with a semiconductor wafer (1) whose insulating layer (3) is an insulating as well as a passivating layer. The semiconductor device must be provided with a usual passivating layer after its manufacture in order to protect it against moisture and other influences. In the method described here, such a passivating layer is present already before the manufacture of the semiconductor device starts.

Semiconductor device with semiconductor elements formed in a layer of

A semiconductor device comprises a substrate (1) with a plane surface (4) on which a layer structure (2) is formed in a number of layers (5, 7, 9, 13, 15, 17). The side of the substrate on which the layer structure was formed is fastened to a plane support body (18) by means of a glue layer (19) which encompasses spacer elements (20). These spacer elements are fastened to the surface of the substrate and all have the same height measured from the surface (4). In fastening the substrate to the support body, glue is provided and the substrate is pressed onto the support body so that the pressure is evenly distributed over the spacer elements.

Semiconductor body with a substrate glued to a support body

A method of manufacturing a semiconductor device which starts with a semiconductor wafer which is provided with a layer of semiconductor material lying on an insulating layer at a first side. Semiconductor elements and conductor tracks are formed on this first side of the semiconductor wafer. Then the semiconductor wafer is fastened with this first side to a support wafer, and material is removed from the semiconductor wafer from its other, second side until the insulating layer has been exposed. The method starts with a semiconductor wafer whose insulating layer is an insulating as well as a passivating layer. The semiconductor device must be provided with a usual passivating layer after its manufacture in order to protect it against moisture and other influences. In the method described here, such a passivating layer is present already before the manufacture of the semiconductor device starts.

Method of manufacturing semiconductor devices with semiconductor

A method of manufacturing a device whereby a layer structure with semiconductor elements and conductor tracks is formed on a first side of a semiconductor wafer which is provided with a layer of semiconductor material disposed on an insulating layer. Then the semiconductor wafer is fastened with said first side to a support wafer by means of a glue layer, the support wafer being provided with a metallization. Material is then removed from the semiconductor wafer from the other, second side thereof until the insulating layer is exposed. Contact windows are provided in the insulating layer from the first side of the semiconductor wafer before the latter is refastened on the support wafer. These windows are filled with a material which can be removed selectively relative to the insulating layer. The contact windows are opened from the second side of the semiconductor wafer after the latter has been fastened on the support wafer and after the insulating layer has been exposed. Furthermore, openings are formed in the layer structure and in the flue layer at the areas of the contact windows, which openings extend down to the metallization on the support wafer, after which the contact windows and the openings formed are provided with conductive elements.

Method of manufacturing a device, by which method a substrate with

The invention relates to a method of manufacturing a semiconductor device (1) for surface mounting. Such a method is known, whereby such a semiconductor device is manufactured in that a semiconductor body with a semiconductor element is mounted on a metal lead frame with metal package leads, after which contact surfaces of the semiconductor element are connected to the package leads by means of bonding wires. It is found that semiconductor devices of small dimensions are difficult to realize by this known method, while in addition the manufacture of integrated circuits with very many package leads is comparatively expensive owing to the many connections which are to be made between the integrated circuits and the package leads. According to the invention, the semiconductor devices are packaged while they are still on a slice of semiconductor material, while the package leads are formed from the semiconductor material. In the method according to the invention, the semiconductor devices are manufactured without the necessity of a lead frame, bonding wires, or metal package leads. Thanks to the IC technologies at the wafer level, such as photolithography, etching, etc., the method according to the invention renders possible semiconductor devices of very small dimensions. In addition, integrated circuits with very many package leads can be manufactured in a simple manner without additional steps being necessary. The method according to the invention is thus comparatively inexpensive.

Method of manufacturing a semiconductor device for surface mounting

A semiconductor device with a carrier body on which a substrate is fastened by means of a glue layer, which substrate is provided at its first side facing the carrier body with a semiconductor element and with a pattern of conductor tracks comprising contact electrodes for external contacting from the second side of the substrate facing away from the carrier body. The substrate is provided with windows at the areas of the contact electrodes for external contacting from the second side. The process steps preceding the gluing of the substrate to the carrier body are carried out in a clean room suitable for the manufacture of semiconductor elements, whereas the remaining process steps are preferably carried out in a final mounting room. Expensive lithographical equipment need not be available in both rooms, because the comparatively large windows can be formed by means of a simple contact mask.

Semiconductor device with a carrier body on which a substrate with a

A method of manufacturing a semiconductor device with a substrate (1) provided with a passive element (2), a pattern of conductors (3, 4), and a semiconductor element (5) which is formed in a small slice (6) of semiconductor material. The passive element (2), the pattern of conductors (3, 4), and the semiconductor element (5) are formed at a first side (8) of a wafer of semiconductor material (7), whereupon this wafer is glued with its first side (8) to the substrate (1), and the semiconductor material of the wafer (7) is removed from the second side (22) thereof, except at the area of the semiconductor element (5). A small slice (6) of semiconductor material thus remains in which the semiconductor element (5) has been formed. The wiring may be realized in a simple manner without the introduction of additional and expensive process steps, while the introduction of parasitic capacitances and self-inductances is counteracted.

Method of manufacturing a hybrid integrated circuit

A semiconductor device for microwave frequencies with a substrate which is provided at a first side with a semiconductor element, a passive element, and a pattern of conductive elements, while the opposed, second side is provided with a metallization which is connected to the elements present on the first side through windows formed in the substrate. The substrate consists of a silicon layer which is present on a layer of insulating material, the semiconductor element being formed in the silicon layer, and the metallization being provided on that side of the layer of insulating material which is remote from the silicon layer. The silicon layer may here have a very small thickness of, for example, 0.1 to 0.2 .mu.m. In such a thin silicon layer, bipolar and field effect transistors capable of processing signals of microwave frequencies can be formed. Since the silicon layer is thin, the influence of the conductivity of silicon on passive elements is small.

Integrated microwave semiconductor device with active and passive

A semiconductor device with a bipolar transistor formed in a layer of semiconductor material (2) provided on an insulating substrate (1), in which material a collector zone (4), a base zone (5), and an emitter zone (6) are provided below a strip of insulating material (3) situated on the layer (2), which zones are connected to contact regions (7, 8, 9, 10) lying adjacent the strip (3), three of the contact regions (8, 9, 10) lying next to one another at a same side of the strip (3), of which two (8 and 9) are connected to the base zone (5) while the third (10), which lies between the former two (8 and 9), is connected to the emitter zone (6). The three contact regions (8, 9, 10) situated next to another at the same side of the strip (3) are provided alternately in the layer of semiconductor material (2) and in a further layer of semiconductor material (19) extending up to the strip (3). The three contact regions (8, 9, 10) connected to the base zone (5) and the emitter zone (6) may be provided with mutual interspacings which are smaller than the details which can be realised in a photoresist layer by means of the photolithographic process to be used in the manufacture of the transistor. As a result, the transistor can be manufactured with a very small extrinsic base.

Semiconductor device with a bipolar transistor formed in a layer of

A semiconductor device includes a semiconductor body (1) having a semiconductor element with connection points (2, 3) which adjoins a surface (4) of the semiconductor body (1) and is laterally insulated and surrounded by a first depression (5) in the surface (4), which depression (5) is provided with a wall (6) and a bottom (7), while the surface (4) of the semiconductor body (1) and the wall (6) and bottom (7) of the depression (5) are covered with an insulating layer (8). The connection points (2, 3) are provided in the insulating layer (8) on the surface (4) of the semiconductor body (1) and are connected to conductor tracks (10, 11) which connect the connection points (2, 3) across a wall (6) to connection surfaces (12, 13) associated with the connection points (2, 3) and situated on the bottom (7). It is found in practice that, in the case of progressive miniaturization, the manufacture of such devices leads to rejects caused by short-circuits between connection surfaces (12, 13). According to the invention, one or several further depressions (50) surrounded by the first depression (5) is/are present in the surface (4) of the semiconductor body (1), while only one connection surface (12, 13) is present on the bottom (7, 57) of each of the first and further depressions (5, 50), which connection surface is connected to a connection point (2, 3) on the surface (4) of the semiconductor body (1) via a conductor track (10, 11). Short-circuits are found to take place in the known semiconductor devices on a wall (6) of the depression (5) when there are more than one conductor tracks (10, 11) on this wall (6). Here, however, only one conductor track (10 or 11) is present on the wall (6, 56 of the depression (5, 50), so short-circuits with other conductor tracks on the wall (6, 56) cannot arise.

Semiconductor device with a semiconductor element provided in a mesa

Method of manufacturing a thin-film magnetic head in which a main layer (5) of a non-magnetic material is formed on a support, which layer is recessed by removing material from a side remote from the support, said recess being subsequently filled up with a soft-magnetic material for forming a flux guide (17a, 17b), whereafter the main layer provided with the filled recess is mechanochemically polished for forming a main surface (19) at which subsequently a layer of a magnetoresistive material is provided for forming a magnetoresistive element (23).

Method of manufacturing a thin-film magnetic head

A method is provided of manufacturing a semiconductor device whereby semiconductor elements (5) and conductor tracks (14) are formed on a first side (2) of a semiconductor slice (1) which is provided with a layer of semiconductor material (4) disposed on an insulating layer (3). Then the semiconductor slice (1) is fastened with said first side (2) to a support slice (15), after which material is removed from the semiconductor slice (1) from the other, second side (17) until the insulating layer (3) has become exposed. The insulating layer (3) is provided with contact windows (18) in which conductive elements (19) are provided. This is done from the first side (2) of the semiconductor slice (1) before the latter is fastened to the support slice (15). The semiconductor elements (5) are externally contacted with a contact wire (20) via the conductive elements (19). The contact windows (18) and the conductive elements (19) may be formed during process steps which are carried out for manufacturing the semiconductor elements.

A method of manufacturing a semiconductor device with a semiconductor element which includes a semiconductor zone (19) situated below an electrode (18) and adjoining a surface (5) of a semiconductor body (1), which semiconductor zone substantially does not project outside the electrode (18) in lateral direction. The electrode (18) is here formed on the surface (5) of the semiconductor body (1), after which semiconductor material adjoining the surface (5) and not covered by the electrode (18) is removed by an etching treatment, whereby the position of the semiconductor zone (19) below the electrode (18) is defined. Before the electrode (18) is formed, a surface zone (16) adjoining the surface (5) is formed in the semiconductor body (1) with a depth and a doping such as are desired for the semiconductor zone (19) to be formed below the electrode (18), after which the electrode (18) is formed on this surface zone and, during the etching treatment, the portion of the surface zone (16) not covered by the electrode (18) is etched away through its entire thickness. Conducting materials such as aluminium or aluminium alloys may be used for the electrode (18), i.e. materials which are not resistant to temperatures necessary for forming semiconductor zones through diffusion.

Method of manufacturing a semiconductor device whereby a laterally

A semiconductor device with a semiconductor body (1) is provided with a first and a second bipolar transistor (T1, T2, respectively) in a cascode configuration, in which the semiconductor body (1) comprises, in that order, a collector region (10) and a base region (11) of the first transistor (T1), a region (12) which forms both an emitter region of the first transistor (T1) and a collector region of the second transistor (T2), a space charge region (13), and a base region (14) and emitter region (15) of the second transistor (T2), while the regions form pn junctions with one another which extend parallel to a main surface (2) of the semiconductor body (1). The base region (14) and the emitter region (15) of the second transistor (T2) adjoin a main surface (3) of the semiconductor body (1). According to the invention, a depression (4) is provided in this main surface (3), cutting through the emitter region (12) of the first transistor (T1) which at the same time is the collector region (12) of the second transistor (T2), the space charge region (13), and the base region (14) of the second transistor (T2) and laterally bounding these; regions, while a connection electrode (B1) for the base region (11) of the first transistor (T1) is provided in the depression (4). No latch-up by a parasitic transistor then takes place in the device.

Bipolar epitaxial cascode with low-level base connection

A method of manufacturing a semiconductor device whereby an spacer is formed from a second layer in a fully self-registering manner after a layer portion of a first layer has been formed. For this purpose, the second layer and a masking layer are provided in that order, which masking layer has a greater thickness next to the layer portion than above it. The portion of the second layer situated above the layer portion and the spacer to be formed is then exposed in that the masking layer is etched back over at least substantially its entire surface. A portion of the masking layer then remains next to the layer portion, which masking layer portion is sufficiently thick for adequately protecting the subjacent portion of the second layer against the treatment which is subsequently carried out and by which the etching resistance of at least the top layer of the exposed portion of the second layer is increased. The non-treated portion of the second layer is then selectively etched relatively to the treated portion in order to form the spacer.

Growing community of inventors

Eindhoven, Netherlands

Henricus G Maas