Technische Universiteit Eindhoven

Henri-Alexei Halpin

Jaime Gómez Rivas

Niels Jacobus Johan Van Hoof

Arkabrata Bhattacharya

Georgios Georgiou

Stan Erik Theodoor Ter Huurne

This disclosure relates to a method for measuring an electric field in the near-field region of an optically excited sample. The method includes optically exciting at least part of the sample. This step includes directing excitation light onto an interface between the sample and a medium. The excitation light is incident onto the interface under an angle of incidence such that total internal reflection of the excitation light occurs at the interface. The method further includes measuring the electric field using a terahertz near-field probe, wherein the terahertz near-field probe is positioned on one side of the interface and the excitation light approaches the interface on another side of the interface. This disclosure further relates to a system and computer program for measuring an electric field in the near-field region of an optically excited sample.

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Ottawa, Canada

Henri-Alexei Halpin