Plastic Logic Limited

University of Cambridge

Cambridge Display Technology Limited

Eidgenossische Technische Hochschule Zurich

Other

Panasonic Corporation

Eindhoven University of Technology

Flexenable Limited

Tohoku University

Plastics Logic Limited

Henning Sirringhaus

Richard Henry Friend

Takeo Kawase

Paul A Cain

Catherine Ramsdale

Thomas Meredith Brown

Paul Smith

Seamus Burns

James Watts

Richard John Wilson

Andrew Bruce Holmes

Carl Martin Hayton

Lay-Lay Chua

Peter Kian-Hoon Ho

Stephen Carl Moratti

Arno Kraft

Tim Von Werne

Timothy Allan Von Werne

Jui-Fen Chang

Anoop Menon

Nicholas Jim Stone

Mark Nikolka

Shalom Goffri

Rene A J Janssen

Christopher Paul Radano

Christian Muller

Pascal Wolfer

Natalie Stingelin-Stutzmann

Yong-Young Noh

John Devin Mackenzie

Michael Mark Murray

Tobin Jay Marks

Antonio Facchetti

Yoshihisa Yamashita

Simon James Jones

Eiji Saitoh

Xiao-Chang Charles Li

William Henry Reeves

Harald Giessen

Jan Jongman

Duncan Barclay

Kieran Reynolds

Kiyotaka Mori

Xiao-Chang Li

Shane Norval

Michael Banach

Kazuya Ando

Heinz Clemens Schweizer

Gitti Frey

Natalie Stutzmann

John Mills

Nir Tessler

Kal Banger

Vincenzo Pecunia

Iyad Nasrallah

Sebastian Mooser

Shun Watanabe

Timothy Von Werne

Mario Carioni

Enrico Gili

Baoquan Sun

Michael C Gwinner

Michael Gwinner

Kulbinder Kumar Banger

Carano Bandel

Hermann Hauser

David William Joseph Wilson

Wilhelmus Theodorus Stefanus Huck

Christoph Wilhelm Sele

Jerome Charmet

Dimitrios Simatos

A sensor device for detecting a target species in an aqueous media and/or measuring the concentration of a target species in an aqueous media, the sensor device comprising: (a) an active semiconductor comprising an organic semiconductor material that exhibit substantially the same transfer curve for a period of at least 24 hours when first exposed to air; and (b) a structure for directing an aqueous media into contact with the sensor device.

Aqueous media sensor

A transistor device comprising an inorganic oxide semiconductor channel having a channel length L and a channel width W between source and drain conductors and capacitively coupled to a gate conductor via an organic polymer dielectric in contact with the inorganic oxide semiconductor channel. The gate voltage required to maintain a constant current of at least X nA between the source and drain conductors over a period of 14 hours while the gate and drain conductors are maintained at the same electric potential, varies by less than 1V, preferably less than about 0.2V; wherein X equals the W/L ratio multiplied by 50.

Organic polymer gate dielectric material for transistor devices

An electronic or optoelectronic device including a semiconductor layer, wherein the semiconductor layer comprises at least a semiconductive organic material, water species, and at least one additive in an amount of at least 0.1% by weight relative to the semiconductive organic material, which additive at least partly negates a charge carrier trapping effect caused by the water species on the semiconductive organic material.

Organic electronic/optoelectronic devices

We describe a method of detecting a voltage from a spin-current, the spin-current comprising a current having a spin predominantly aligned in a spin direction, the method comprising: flowing the spin current through a layer of organic material in a vertical direction through the layer; and detecting an electric field in a lateral direction in the layer of organic material. In a preferred embodiment the organic layer is anisotropic and has a higher electrical conductivity in the lateral direction than in the vertical direction.

Electronic devices

A method of producing an electronic device including the steps of: (i) providing a body including a first, conductive element separated from a first surface of said body by a portion of said body; (ii) removing a selected portion of said body to define a recess in said body extending from said first surface and via which a portion of said first element is exposed; and (iii) putting into said recess a liquid medium carrying a first material; wherein said first material is preferentially deposited on the exposed inner surface of said body defining said recess, and wherein the deposited first material is used to provide a connection between said first element and a second conductive element located within said body or later deposited over said first surface of said body.

A method for forming a semiconductor body, the method comprising: forming a mixture of an organic semiconducting material and a binder material; causing the semiconducting material to at least partially solidify; and causing the binder material to crystallize in such a way as to cause the semiconducting material to at least partially segregate from the binder material.

Blended polymer FETs

This invention generally relates to a patterned substrate for an electronic device and to electronic devices, device arrays, field effect transistors and transistor arrays comprising the patterned substrate. The invention also relates to a logic circuit, display, memory or sensor device comprising the patterned substrate. Further the invention relates to a method of patterning a substrate for an electronic device. In an embodiment, a patterned substrate for an electronic device comprises: a first body having an edge; a second body comprising an elongate plurality of printed droplets having an edge adjacent to and substantially aligned to said first body edge; and a separation between said first body edge and said second body edge, wherein said elongate plurality of printed droplets is at an angle of about 5 degrees to about 90 degrees to said first body edge.

Printed electronic device

A method for forming an electronic switching device on a substrate, wherein the method comprises depositing the active semiconducting layer of the electronic switching device onto the substrate from a liquid dispersion of ligand-modified colloidal nanorods, and subsequently immersing the substrate into a growth solution to increase the diameter and/or length of the nanorods on the substrate, and wherein the as-deposited nanorods are aligned such that their long-axis is aligned preferentially in the plane of current flow in the electronic switching device.

Nanorod thin-film transistors

The present invention relates integrated optoelectronic devices comprising light emitting field-effect transistors. We describe an optoelectronic device comprising a light-emitting field effect transistor (LFET) with an organic semiconductor active layer and a waveguide integrated within the channel of the light-emitting field effect transistor, wherein said waveguide comprises a material which has a higher refractive index than said organic semiconductor. We also describe a light-emitting organic field transistor integrated with a ridge or rib waveguide incorporated within the channel of the LFET; and a similar light-emitting organic field effect transistor in which the waveguide incorporates an optical feedback mechanism.

Optoelectronic devices

The present invention provides a method of patterning an electronic or photonic material on a substrate comprising: forming a film of said electronic or photonic material on said substrate; and using a fluoropolymer to protect regions of said electronic or photonic material during a patterning process.

Patterning

A method of producing a metal element of an electronic device on a substrate, including the steps of: forming a mixture of a material comprising metal atoms with a liquid, depositing the material from the liquid mixture onto a substrate, and then irradiating at least part of the deposited material with light to increase the electrical conductivity of the deposited material. A method of producing one or more elements of an electronic device, including the steps of: providing a substrate including one or more underlying elements of the electronic device and a thermally patternable layer overlying said one or more underlying elements; and using said one or more underlying elements to locally generate heat and thereby selectively induce a change in corresponding portions of said thermally patternable layer; and wherein either the change selectively induced in said corresponding portions directly results in the definition of one or more elements of the electronic device in a position determined by that of said one or more underlying elements, or alternatively including the additional step of using the change selectively induced in said one or more corresponding portions to facilitate the formation of one or more elements of the electronic device in a position determined by that of said one or more underlying elements. A method of producing an element of an electronic device, including the steps of: (a) providing a substrate; (b) depositing on said substrate a layer of a switchable material, which changes its physical or chemical properties upon irradiation with light or heating causing a change of its surface energy properties; (c) irradiatively inducing at selected regions of a layer of switchable material a change in physical or chemical properties that alters the surface energy of said selected regions and thereby forming a surface energy pattern on its surface; and (d) without removing said layer of switchable material in either irradiated selected regions or non-irradiated regions from the substrate depositing over the surface energy pattern produced in step (c) a material for forming an element of the electronic device such that the surface energy pattern controls the deposition of said material.

Production of electronic devices

An electronic device comprising an optically transparent substrate, a first electrode structure incorporating a channel, said channel being optically transparent and said electrode structure being optically opaque, at least one intermediate layer, and a photosensitive dielectric layer disposed above the at least one intermediate layer, the photosensitive dielectric layer incorporating a trench in a region essentially over said channel, the electronic device further comprising a further electrode, wherein the further electrode is located partially in the trench and partially beyond the trench such that portions of the further electrode that extend beyond the trench are separated from the at least one intermediate layer by the photosensitive dielectric layer.

Thin film transistor with accurately aligned electrode patterns and electronic device(s) that include same

An electronic device including at least first and second transistors integrated together on a substrate and each including an organic semiconductor region, wherein the first and second transistors are either both n-type or both p-type but wherein one of the first and second transistors is a normally-ON transistor and the other of the first and second transistors is a normally-OFF transistor.

Organic electronic devices

Thin film transistor device with accurately aligned electrode patterns

A technique for isolating electrodes on different layers of a multilayer electronic device across an array containing more than 100000 devices on a plastic substrate. The technique comprises depositing a bilayer of a first dielectric layer () of a solution-processible polymer dielectric and a layer of parylene () to isolate layers of conductor or semiconductor on different levels of the device. The density of defects located in the active area of one of the multilayer electronic devices is typically more than 1 in 100000.

Reducing defects in electronic switching devices

Growing community of inventors

Cambridge, United Kingdom

Henning Sirringhaus