Infineon Technologies Ag

Qimonda Ag

Forschungsverbund Berlin E.v.

Humboldt-universität Zu Berlin

Henning Riechert

Walter Michael Weber

Norbert Koch

Fritz Henneberger

Anton Yurevitch Egorov

The invention relates, inter alia, to an arrangement () for generating electromagnetic radiation, wherein the arrangement comprises inorganic semiconductor material and organic material (), characterized by a semiconductor cylinder () composed of inorganic semiconductor material and a charge carrier injection zone () situated in the semiconductor cylinder, wherein the charge carrier injection zone adjoins the lateral surface () of the semiconductor cylinder, the organic material () is suitable for emitting electromagnetic radiation in the case of a charge carrier recombination, and the organic material bears indirectly or directly on that section of the lateral surface of the semiconductor cylinder which is adjoined by the charge carrier injection zone and electron-hole pairs from the charge carrier injection zone of the semiconductor cylinder can enter into the organic material, and excite there the emission of electromagnetic radiation by recombination.

Arrangement for generating electromagnetic radiation

An integrated circuit including a hetero-interface and a manufacturing method thereof is disclosed. One embodiment includes forming a hetero-structure including a hetero-interface at a junction between a first region and a second region, and, thereafter introducing a material into the first region and at least up to the hetero-interface, wherein a diffusion constant of the material is higher in the first region than in the second region.

Integrated circuit including a hetero-interface and self adjusted diffusion method for manufacturing the same

The active layer () and the barrier layers () contain a group III component, a group V component and nitrogen, whereby the active layer is a quaternary material and the barrier layers are ternary materials, or, in order to match the lattice properties of the active layer to the barrier layers, the nitrogen content in the barrier layers is higher. The active layer is preferably InGaAsN, the barrier layers are InGaAsN with higher nitrogen content or GaAsN. Superlattices may exist in the barrier layers, for example, series of thin layers of InGaAsNwith varying factors x and y, where, in particular, x=0 and y=1.

Semiconductor laser structure

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Ottobrunn, Germany

Henning Riechert