Schott Solar Ag

Fraunhofer-gesellschaft Zur Foerderung Der Angewandten Forschung E.v.

Henning Nagel

Ingo Schwirtlich

Wilfried Schmidt

Agata Lachowicz

Dieter Franke

Markus Fiedler

Jens Dirk Moschner

The invention relates to a method for measuring the high-voltage induced degradation (PID) of at least one solar cell. According to the invention, a conductive plastic material is pressed on the upper side or bottom side of the respective solar cell, in particular on the front side thereof, and a DC voltage greater than 50 V is applied between the plastic material and the respective solar cell. Alternatively, corona discharges may be applied to solar cells or photovoltaic modules. In one embodiment, a characteristic electric parameter of the respective solar cell or of the photovoltaic module is repeatedly measured at time intervals. The method according to the invention can be carried out on individual solar cells, which can be further processed directly after passing the test and without further complex processing, e.g. to a photovoltaic module. In principle, the method is also suitable for measurements on complete photovoltaic modules.

Method for measuring potential induced degradation of at least one solar cell or of a photovoltaic panel as well as the use of same method in the production of solar cells and photovoltaic panels

A crystalline solar cell is provided that includes a front-sided n-doped area and a rear-sided p-doped area, a front-sided contact, a rear-sided contact and at least one front-sided first layer made from SiN. In order to reduce degradation of the parallel resistance, a second layer made of at least one material selected from the group SiN, SiOx, Al2Ox, SiOxNy: Hz, a-Si:H, TiOx or containing said type of material is disposed between the first layer and the n-doped area and is then doped for forming imperfections.

Crystalline solar cell, method for producing said type of solar cell and method for producing a solar cell module

The invention relates to a method for producing a solar cell having a substrate made of silicon, which substrate has a silicon oxide layer present on the surface of the substrate and an antireflection layer applied to the silicon oxide layer, which antireflection layer is deposited onto the dielectric passivation layer in a process chamber. According to the invention, in order to achieve a stability of corresponding solar cells or solar cell modules produced therefrom against a potential induced degradation (PID), the dielectric passivation layer is formed from the surface of the substrate in the process chamber by means of a plasma containing an oxidizing gas.

Method for producing a solar cell

Process for producing strip-shaped and/or point-shaped electrically conducting contacts on a semiconductor component like a solar cell, includes the steps of applying a moist material forming the contacts in a desired striplike and/or point-like arrangement on at least one exterior surface of the semiconductor component; drying the moist material by heating the semiconductor component to a temperature Tand keeping the semiconductor element at temperature Tover a time t; sintering the dried material by heating the semiconductor component to a temperature Tand keeping the semiconductor component at temperature Tover a time t; cooling the semiconductor component to a temperature Tthat is equal or roughly equal to room temperature, and keeping the semiconductor component at temperature Tover a time T; cooling the semiconductor component to a temperature Twith T&#x2266;&#x2212;35&#xb0; C. and keeping the semiconductor component at temperature Tover a time T; and heating the semiconductor component to room temperature.

Method for producing electric contacts on a semiconductor component

The invention relates to a method and to an arrangement for localizing production errors in a semiconductor component part by generating excess charge carriers in the semiconductor component part and by determining the electric potential in said part. In order to be able to localize production errors with simple measures and without damaging the semiconductor component part, it is suggested that the semiconductor component part be stimulated to become luminescent and that the locally resolved luminescence intensity distribution be determined in order to determine the locally resolved distribution of the electric potential in the semiconductor component part.

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Alzenau, Germany

Henning Nagel