Robert Bosch

Henning Lohmeyer

Michael Graf

Daniel Schneider

Timo Seitzinger

Alexander Mann

Julia Rauh

A protective circuit against electrostatic discharges for connection pins of an application-specific integrated circuit. The protective circuit includes a first connection pin and a second connection pin, and the first connection pin and the second connection pin being connected to one another in a Y configuration. Moreover, an application-specific integrated circuit including a protective circuit of this type is provided.

Protective circuit against electrostatic discharges

A power transistor, a driver and an output stage. The power transistor includes an active region and a metallization level located above the active region for power distribution and for detecting an imminent metallization error induced by stress (RPP stress) caused by repeated power pulses. The power transistor also includes a further metallization level, which is located above the metallization level and in which galvanically isolated metal elements extend mutually parallel in a direction of extent, of which one pair is used for energizing the power transistor. It is a characteristic of the power transistor that at least one cut-out is formed above the active region in the further metallization level. The cut-out has the effect of decreasing heat dissipation. The power transistor is thereby heated more intensely in the localized region, so that large temperature gradients occur in the transition region defined by the edges of the metal elements.

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Reutlingen, Germany

Henning Lohmeyer