Robert Boschgmbh

Henning Hauenstein

Dirk Balszunat

Richard Spitz

Wolfgang Feiler

Rainer Topp

Achim Henkel

Markus Baur

Jochen Seibold

Stephan Ernst

Stefan Hornung

Thomas Koester

Stefan Ernst

Dieter Streb

A connecting device for contacting a semiconductor component to at least one further component, the connecting device comprising at least one metal connecting strip extending in a longitudinal direction and having a contact region for mounting on a terminal region of the semiconductor component. In order to achieve a contacting system that can be manufactured inexpensively but can nevertheless carry high current densities, a connecting device is proposed whose contact region is embodied in structured fashion and flexibly with respect to stresses that extend in a terminal plane parallel to the terminal region.

Connecting device for contacting a semiconductor component

A polarity-reversal protector for power sources, in particular for automobile batteries, which is connected between a power source and at least one consumer and/or at least one generator, is described. The polarity-reversal protector is to prevent the reverse polarity current from flowing through the connected systems, so that the systems may not be damaged in case of polarity reversal. For this purpose, the polarity-reversal protector includes means for recognizing whether the two poles of the power source are connected to the appropriate terminals of the consumer and/or generator, and means for decoupling the power source from the consumer and/or from the generator if the two poles of the power source have been transposed during connection to the consumer and/or generator.

Polarity-reversal protection circuit for energy sources

A semiconductor component that is able to be produced simply, quickly, and yet reliably and that usable for power applications, and including a semiconductor chip, a lower, first main electrode layer formed on a first side of the semiconductor chip, a lower control electrode layer formed on the first side, an insulation layer formed on the first side between the lower first main electrode layer and the lower control electrode layer and which partly covers the lower first main electrode layer, an upper first main electrode layer which is formed on the lower first main electrode layer, an upper control electrode layer which is formed on the lower control electrode layer and the insulation layer and extends on the insulation layer partially above the lower first main electrode layer, and a second main electrode layer formed on a second side of the semiconductor chip.

Semiconductor component

A device includes a magnetic-field sensor and an ammeter, in which a field distribution of a first electric field is provided in a region so that the magnitude of the x component of the first electric field increases in the x direction.

Device for measuring a B-component of a magnetic field, a magnetic field sensor and an ammeter

An apparatus and a method for measuring operating temperatures Tof a component, particularly transient temperatures Tin the breakdown region of the componentduring a breakdown operation, are provided. The component temperature Tat a point of time tis ascertainable from a measurement of the breakdown voltage Uand the breakdown current I of the componentat the specific point of time tduring the breakdown operation using a measuring device, by comparing the measurement data to reference measurement data recorded in advance.

Apparatus and method for measuring operating temperatures of an electrical component

A method and a device for determining temperatures on semiconductor components are provided. In order to determine a temperature on a semiconductor component, a scanning light wave is irradiated onto a measuring point on the semiconductor component. Next, a response light wave reflected from the measuring point is recorded. Then, the temperature of the measuring point is ascertained with the aid of a temperature-dependent property R of the response light wave.

Method for determining temperatures on semiconductor components

Proposed are a device, a magnetic-field sensor and a current sensor, the device having the feature that provision is made for a first magnetic-field sensing means, for a second magnetic-field sensing means, and for a third magnetic-field sensing means, a first output variable of the first magnetic-field sensing means being provided as a first input variable, a second output variable of the first magnetic-field sensing means being provided as a second input variable, the first input variable being provided as input variable for the second magnetic-field sensing means, and the second input variable being provided as input variable for the third magnetic-field sensing means.

Device for sensing a magnetic field, magnetic field meter and an ammeter

A device for measuring the strength of a vector component of a magnetic field, a current-measuring device and a use of a field-effect transistor are proposed, the orientation of the wall of the at least one first trench gate being provided orthogonally with respect to the magnetic-field vector component to be measured.

Growing community of inventors

Reutlingen, Germany

Henning Hauenstein