Infineon Technologies Ag

Infineon Technologies Dresden Gmbh & Co . Kg

Pmdtechnologies Ag

Infineon Technologies Austria Ag

Henning Feick

Dirk Offenberg

Stefano Parascandola

Hans Taddiken

Anton Steltenpohl

Ines Uhlig

Thoralf Kautzsch

Kerstin Kaemmer

Martin Bartels

Andrea Cattaneo

Thomas Bertrams

Dirk Meinhold

Valentyn Solomko

Christoph Kadow

Jens Schneider

Uwe Seidel

Hanno Melzner

Thomas Bever

Dominik Heiss

Jens Prima

Dieter Kaiser

Marcel Heller

Matthias Franke

Christian Kuehn

Robert Roessler

Christian Butschkow

Rolf Weis

Michael Bernhard Sommer

Erhard Landgraf

Olaf Storbeck

Claus Dahl

Andreas Pribil

Matthias Schmeide

Franz Hirler

Andreas Peter Meiser

Mirko Vogt

Maik Stegemann

Heiko Froehlich

Juergen Faul

Philipp Riess

Boris Binder

Martin Wendel

Andre Roeth

Ahmed Mahmoud

Thomas Popp

Marco Haubold

Vladislav Komenko

Andrey Kravchenko

Magali Glemet

Olga Khvostikova

Andreas Urban Bertl

Josef Deichler

Dennis Niemeier

A method for producing a protection device and a protection device are disclosed. The method includes: forming a first diode arrangement including at least one first diode and at least one second diode connected in anti-series between a first circuit node and a second circuit node of the first diode arrangement; forming a second diode arrangement including at least one first diode and at least one second diode connected in anti-series between a first circuit node and a second circuit node of the second diode arrangement; and connecting the second circuit node of the first diode arrangement and the second circuit node of the second diode arrangement.

Protection device with space saving layout

A device includes a thinned semiconductor substrate having a first side and a second side opposite to the first side; and at least one radio frequency device at the first side, wherein the second side of the thinned semiconductor substrate is processed to reduce leakage currents or to improve a radio frequency linearity of the at least one radio frequency device through Bosch etching.

Methods and devices related to radio frequency devices

An electronic device is disclosed. The electronic device includes: a first doped region of a first doping type arranged in a first semiconductor layer of a second doping type complementary to the first doping type; an insulation layer formed on top of the first semiconductor layer and adjoining the first doped region; at least two active device regions arranged in a second semiconductor layer formed on top of the insulation layer; and an electrical connection between one of the at least two active device regions and the first doped region. Each of the at least two active device regions is arranged adjacent to the first doped region and separated from the first doped region by the insulation layer.

Electronic device and charge pump circuit

A photon avalanche diode includes: first, second, and third diodes formed in a semiconductor body, the second diode being a photodiode; a main cathode terminal connected to the cathode of the first diode; a main anode terminal connected to the anode of the third diode; an auxiliary cathode terminal connected to the cathode of the second and third diodes; and an auxiliary anode terminal connected to the anode of the first and second diodes. The main anode terminal is electrically connected to ground or a reference potential. The main cathode terminal is electrically connected to a voltage which causes a photocarrier multiplication region to form within the semiconductor body. The auxiliary anode terminal is electrically connected to ground or to a read-out circuit. The auxiliary cathode terminal is electrically connected to a constant bias voltage less than a voltage applied to the main cathode terminal.

Photon avalanche diode having first, second, and third diodes formed in a semiconductor body

According to an embodiment, a time of flight sensor device includes: a semiconductor substrate having a conversion region to convert an electromagnetic signal into photo-generated charge carriers, and including a substrate doping region having a n-doping type. The substrate doping region extends from a first main surface region of the semiconductor substrate into the semiconductor substrate. The semiconductor substrate has a p doped region adjacent to the substrate doping region. The substrate doping region at least partially forms the conversion region in the semiconductor substrate. A readout node arranged in the semiconductor substrate within the substrate doping region and having the n-doping type is configured to readout the photo generated charge carriers. A control electrode is arranged in the substrate doping region of the semiconductor substrate and in the substrate doping region and has a p-doping type.

Time of flight sensor device and time of flight sensor arrangement

A sensor device includes: a semiconductor substrate having a sensing region which extends vertically below a main surface region of the semiconductor substrate into the substrate; a semiconductor capping layer that extends vertically below the main surface region into the substrate; a buried deep trench structure that extends vertically below the capping layer into the substrate and laterally relative to the sensing region, the buried deep trench structure including a doped semiconductor layer that extends from a surface region of the buried deep trench structure into the substrate; a trench doping region that extends from the doped semiconductor layer of the buried deep trench structure into the substrate; and electronic circuitry for the sensing region in a capping region of the substrate vertically above the buried deep trench structure. Methods of manufacturing the sensor device are also provided.

Method for manufacturing a sensor device with a buried deep trench structure and sensor device

A method of generating a germanium structure includes performing an epitaxial depositing process on an assembly of a silicon substrate and an oxide layer, wherein one or more trenches in the oxide layer expose surface portions of the silicon substrate. The epitaxial depositing process includes depositing germanium onto the assembly during a first phase, performing an etch process during a second phase following the first phase in order to remove germanium from the oxide layer, and repeating the first and second phases. A germanium crystal is grown in the trench or trenches. An optical device includes a light-incidence surface formed by a raw textured surface of a germanium structure obtained by an epitaxial depositing process without processing the surface of the germanium structure after the epitaxial process.

Method of generating a germanium structure and optical device comprising a germanium structure

A photon avalanche diode includes a semiconductor body having a first side and a second side opposite the first side, a primary doped region of a first conductivity type at the first side of the semiconductor body, a primary doped region of a second conductivity type opposite the first conductivity type at the second side of the semiconductor body, an enhancement region of the second conductivity type below and adjoining the primary doped region of the first conductivity type, the enhancement region forming an active pn-junction with the primary doped region of the first conductivity type, and a collection region of the first conductivity type interposed between the enhancement region and the primary doped region of the second conductivity type and configured to transport a photocarrier generated in the collection region or the primary doped region of the second conductivity type towards the enhancement region.

Photon avalanche diode and methods of producing thereof

A transistor arrangement includes: a layer stack with first and second semiconductor layers of complementary first and second doping types; a first source region of a first transistor device adjoining the first semiconductor layers; a first drain region of the first transistor device adjoining the second semiconductor layers and spaced apart from the first source region; gate regions of the first transistor device, each gate region adjoining at least one second semiconductor layer, being arranged between the first source region and the first drain region, and being spaced apart from the first source region and the first drain region; a third semiconductor layer adjoining the layer stack and each of the first source region, first drain region, and each gate region; and active regions of a second transistor device integrated in the third semiconductor layer in a second region spaced apart from a first region of the third semiconductor layer.

Superjunction transistor arrangement and method of producing thereof

A method includes providing a semiconductor substrate having a first side and a second side opposite to the first side, forming at least one radio frequency device at the first side; thinning the semiconductor substrate from the second side; and processing the second side of the thinned semiconductor substrate to reduce leakage currents or to improve a radio frequency linearity of the at least one radio frequency device.

An optical sensor device configured to detect a time of flight of an electromagnetic signal includes a semiconductor substrate having a main surface and a conversion region configured to convert at least a fraction of the electromagnetic signal into photo-generated charge carriers; a first control electrode formed in a trench extending from the main surface into the semiconductor substrate; a second control electrode disposed directly or indirectly on the main surface; a control circuit configured to apply a varying first potential to the first control electrode and to apply a varying second potential to the second control electrode, where the varying second potential has a fixed phase relationship to the first varying potential, to generate electric potential distributions in the conversion region to direct the photo-generated charge carriers; and a readout node arranged in the semiconductor substrate and configured to detect the directed photo-generated charge carriers.

Optical sensor device with deep and shallow control electrodes

A radio frequency resistor element comprises a resistive polysilicon trace, an isolation component and a semiconductor substrate. The resistive polysilicon trace is located above the isolation component. The isolation component is laterally at least partially surrounded by a modified semiconductor region located above the semiconductor substrate and having a higher charge carrier recombination rate than the semiconductor substrate.

Radio frequency resistor element

Embodiments related to controlling of photo-generated charge carriers are described and depicted. At least one embodiment provides a semiconductor substrate comprising a photo-conversion region to convert light into photo-generated charge carriers; a region to accumulate the photo-generated charge carriers; a control electrode structure including a plurality of control electrodes to generate a potential distribution such that the photo-generated carriers are guided towards the region to accumulate the photo-generated charge carriers based on signals applied to the control electrode structure; a non-uniform doping profile in the semiconductor substrate to generate an electric field with vertical field vector components in at least a part of the photo-conversion region.

Controlling of photo-generated charge carriers

An optical sensor device comprising a conversion region to convert an electromagnetic signal into photo-generated charge carriers is shown. The optical sensor device comprises a read-out node configured to read-out the photo-generated charge carriers and a control electrode which is separated by an isolating material from the conversion region. Furthermore, the optical sensor device comprises a doping region in the semiconductor substrate between the control electrode and the conversion region, wherein the doping region comprises a higher doping concentration compared to a minimum doping concentration of the conversion region, wherein the doping concentration is at least 1000 times higher than the minimum doping concentration of the conversion region and wherein the doping region extends into the semiconductor substrate. Moreover, a projection of the control electrode towards the conversion region overlaps the doping region or is located in the doping region. Embodiments show the optical sensor device as a time-of-flight sensor.

Optical sensor device and method for manufacturing the optical sensor device

Growing community of inventors

Dresden, Germany

Henning Feick