Nxp B.v.

Henk Jan Peuscher

Stephan Jo Cecile Henri Theeuwen

Johannes Adrianus Maria De Boet

Paul Bron

Laterally diffused metal oxide semiconductor transistor for a radio frequency-power: amplifier comprising a drain finger () which drain finger is connected to a stack of one or more metal interconnect layers, () wherein a metal interconnect layer () of said stack is connected to a drain region () on the substrate, wherein said stack comprises a field plate () adapted to reduce the maximum magnitude of the electric field between the drain and the substrate and overlying the tip of said drain finger.

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Wijchen, Netherlands

Henk Jan Peuscher