University of California

Mitsubishi Chemical Corporation

The Mitsubishi Chemical Corporation, a Japanese Corporation

Hengbin Wang

Michael L Chabinyc

Hidenori Nakayama

Guillermo C Bazan

Fred Wudl

Javier Read De Alaniz

Kyle D Clark

Julia Schneider

Craig Jon Hawker

Galen D Stucky

Shinji Aramaki

Thuc-Quyen Nguyen

Takaaki Niinomi

Michael J Ford

Ken Tasaki

Arunkumar Venkatesan

Martin Seifrid

Jaewon Lee

Yonghao Zheng

Bruno Jousselme

Sung-Yu Ku

Soe-Jin Ko

Christopher Liman

Jianfei Huang

Triazabicylodecene can effectively n-dope a variety of organic semiconductors, including PCBM, thus increasing in-plane conductivities. We synthesized a series of TBD-based n-dopants via an N-alkylation reaction and studied the effect of various alkyl chains on the physical and device properties of the dopants. Combining two TBD moieties on a long alky chain gave a solid dopant, 2TBD-C10, with high thermal stability above 250° C. PCBM films doped by 2TBD-C10 were the most tolerant to thermal annealing and reached in-plane conductivities of 6.5×10S/cm. Furthermore, incorporating 2TBD-C10 doped PCBM as the electron transport layer (ETL) in methylammonium lead triiodide (MAPbI) based photovoltaics led to a 23% increase in performance, from 11.8% to 14.5% PCE.

N-type dopants for efficient solar cells

Narrow bandgap n-type small molecules are attracting attention in the near-infrared organic optoelectronics field, due to their easy tunable energy band with a molecular design flexibility. However, only a few reports demonstrate narrow bandgap non-fullerene acceptors (NFAs) that perform well in organic solar cells (OSCs), and the corresponding benefits of NFA photodiodes have not been well investigated in organic photodetectors (OPDs). Here, the ultra-narrow bandgap NFAs CO1-4F, CO1-4Cl and o-IO1 were designed and synthesized for the achieved efficient near-infrared organic photodiodes such as solar cells and photodetectors. Designing an asymmetrical CO1-4F by introducing two different π-bridges including alkylthienyl and alkoxythienyl units ultimately provides an asymmetric A-D′-D-D″-A molecular configuration. This enables a delicate modulation in energy band structure as well as maintains an intense intramolecular charge transfer characteristic of the excited state.

Organic solar cell and photodetector materials and devices

Triazabicylodecene can effectively n-dope a variety of organic semiconductors, including PCBM, thus increasing in-plane conductivities. We synthesized a series of TBD-based n-dopants via an N-alkylation reaction and studied the effect of various alkyl chains on the physical and device properties of the dopants. Combining two TBD moieties on a long alky chain gave a solid dopant, 2TBD-C10, with high thermal stability above 250&#xb0; C. PCBM films doped by 2TBD-C10 were the most tolerant to thermal annealing and reached in-plane conductivities of 6.5&#xd7;10S/cm. Furthermore, incorporating 2TBD-C10 doped PCBM as the electron transport layer (ETL) in methylammonium lead triiodide (MAPbI) based photovoltaics led to a 23% increase in performance, from 11.8% to 14.5% PCE.

Sulfur-fused perylene diimides (PDIs) having the formula 2PDI-nS, wherein n is an integer. Such sulfur-fused PDIs (e.g., 2PDI-2S, 2PDI-3S, and 2PDI-4S) are incorporated as electron acceptors in an active region of a bulk heterojunction solar cell and/or as an electron transport layer. Example solar cells exhibit a power conversion efficiency above 5% and a fill factor above 70% (a record high for non-fullerene bulk heterojunction solar cell devices) when 2PDI-nS is used as the electron acceptor. In addition, the solar cells exhibit low open circuit voltage (V) loss.

Efficient solar cells via sulfur-fused helical perylene diimides design concept

The present disclosure describes additives that attenuate a specific transport channel in ambipolar semiconductors to achieve unipolar characteristics. Carrier selective traps are included in the ambipolar semiconductors and are chosen on the basis of energetic preferences for holes or electrons and the relative positions of the molecular orbital energies of host polymer and the dopants. In one embodiment, a composition of matter useful as a current transport region in an organic semiconductor device comprises a semiconducting polymer; and means for accepting holes (e.g., a hole trapping compound) injected into the current transport region so as to impede conduction of the holes in the semiconducting polymer. This simple solution-processable method can improve the on and off current ratios (I/I) of OFETs by up to three orders of magnitude. Moreover, the treatment yields tailored blends that can be used to fabricate complementary inverters with excellent gain and low-power characteristics.

Organic semiconductor solution blends for switching ambipolar transport to N-type transport

A method of fabricating an organic device is provided comprising providing a first solution comprising an organic semiconductor or a precursor thereof; a solvent and a decomposable polymer additive, where the polymer additive is heated so that it decomposes into gas. The method is applicable to large scale fabrication of OLEDs, OPVs and OFET devices.

Organic electronic devices prepared using decomposable polymer additives

The components of and a proton conducting membrane (PCM) produced from a host polymer and an attached or physically blended in hydrogen cyano fullerene proton-source agent, with the physical blending of the host polymer and hydrogen cyano fullerene further promoted by a poly(ethylene oxide) attached fullerene mixing agent.

Hydrogen cyano fullerene containing proton conducting membranes

Growing community of inventors

Santa Barbara, CA, United States of America

Hengbin Wang