Epistar Corporation

Heng-Ying Cho

De-Shan Kuo

Li-Yu Shen

Chih-Hao Chen

Chen Ou

Li-Ming Chang

Keng-Lin Chuang

Yu-Yi Hung

A light-emitting device comprises a semiconductor stack emitting a light with a peak wavelength λ; and a light field adjustment layer formed on the semiconductor stack, wherein the light field adjustment layer comprises a plurality of first layers and a plurality of second layers alternately stacked on top of each other, the plurality of first layers each comprises a first optical thickness, and the plurality of second layers each comprises a second optical thickness.

Light-emitting device

A light-emitting device, including: a semiconductor stack generating a first light; and a filter formed on the semiconductor stack, including a first surface facing the semiconductor stack and a second surface opposite to the first surface; and a transparent conductive layer formed on the semiconductor stack; wherein: the filter includes a plurality of first dielectric layers with a first refractive index and a plurality of second dielectric layers with a second refractive index alternately stacked, a portion of the first light is transmitted by the filter and extracted from the second surface, the light-emitting device has a beam angle in a range of 50 degrees to 110 degrees, and the filter comprises a light transmittance of more than 90% with respect to light incident at an incident angle in a range less than 10 degrees.

Light-emitting device and display device having the same

A light-emitting device includes a substrate having a first surface and a second surface opposite to the first surface; a light-emitting stack formed on the first surface; and a distributed Bragg reflection structure formed on the second surface, wherein the distributed Bragg reflection structure includes a first film stack and a second film stack; wherein the first film stack includes a plurality of first dielectric-layer pairs consecutively arranged, the second film stack includes a plurality of second dielectric-layer pairs consecutively arranged, each of the first dielectric-layer pairs and each of the second dielectric-layer pairs respectively includes a first dielectric layer having an optical thickness and a second dielectric layer having an optical thickness; wherein the second dielectric layer has a refractive index higher than that of the first dielectric layer; wherein in each of the first dielectric-layer pairs of the first film stack, the optical thickness of the first dielectric layer to the optical thickness of the second dielectric layer have a first ratio, and in each of the second dielectric-layer pairs of the second film stack, the optical thickness of the first dielectric layer to the optical thickness of the second dielectric layer have a second ratio; wherein the first ratio is greater than the second ratio; and wherein the first film stack is farther from the second surface of the substrate than the second film stack.

Light-emitting device with distributed Bragg reflection structure

A light-emitting device includes a substrate, having a first surface and second surface opposite to the first surface; a light-emitting stack, formed on the first surface of the substrate, the light-emitting stack including a first semiconductor layer, an active layer and a second semiconductor layer, wherein the active layer is formed between the first conductive semiconductor layer and the second conductive semiconductor layer; and a distributed Bragg reflection structure (DBR), formed on the second surface of the substrate, including a plurality of dielectric-layer pair formed sequentially on the second surface, wherein each of the dielectric-layer pairs includes respectively a first dielectric layer having a first optical thickness and a second dielectric layer having a second optical thickness, and wherein from the second surface, the first dielectric layer of each of the dielectric-layer pairs is thicker than the first dielectric layer of the adjacent previous dielectric-layer pair.

Growing community of inventors

Hsinchu, Taiwan

Heng-Ying Cho