Industrial Technology Research Institute

Heng-Tien Lin

Su-Tsai Lu

Kuo-Hua Tseng

Sheng-Feng Chung

Shu-Yi Chang

Chun-Ting Liu

Chen-Kun Chen

Ching Ting

Gue-Wuu Hwang

Yi-Jen Chan

Jyun-Kai Ciou

Bao-Shun Yau

Chia-Sheng Huang

Cheng-Yi Shih

Ching-Chih Wei

Jun-Rong Chen

Jui-Fen Fan

Yu-Ling Hsieh

A mesh electrode, a sensing device and an electrode layer are provided, in which the sensing device includes the mesh electrode. The mesh electrode is formed by a plurality of grid lines intersecting and connected to each other. The grid line has a bottom surface and a cross-section, and the cross-section is perpendicular to the bottom surface and has at least one curved portion. The electrode layer includes a plurality of conducting lines. The conducting lines have at least three line widths or at least three spaces. An appearing probability of each line width may be identical in the electrode layer. An appearing probability of each space may be identical in the electrode layer. The conducting line has a bottom surface and a cross-section, and the cross-section is perpendicular to the bottom surface and has at least one curved portion.

Mesh electrode, sensing device, and electrode layer

A sensing structure includes a sensing unit, a periphery circuit, and a connecting circuit. The connecting circuit connecting the sensing unit and the periphery circuit includes a connecting pattern. In an embodiment, the connecting pattern has at least two line widths. The line width of a part of the connecting pattern connecting the periphery circuit is greater than the line width of a part of the connecting pattern connecting the sensing unit. In an embodiment, the connecting pattern includes a mesh pattern having at least two mesh densities. The mesh density of a part of the mesh pattern connecting the periphery circuit is greater than the mesh density of a part of the mesh pattern connecting the sensing unit. In an embodiment, the connecting circuit includes lines between and connecting a single sensing series of the sensing unit and a periphery wire of the periphery circuit.

Sensing structure

A touch panel and a manufacturing method thereof and a touch display panel are provided. The touch panel includes a substrate, at least one first conductive line, an insulating layer, and at least one second conductive line. The substrate has a sensing region and a periphery region. The first conductive line is disposed on the periphery region. The insulating layer is disposed on the periphery region and covers the first conductive line. The second conductive line is disposed on the periphery region. The first conductive line and the second conductive line are electrically insulated to each other. A portion of at least one second conductive line is disposed on the insulating layer located above the first conductive line.

Touch panel and manufacturing method thereof and touch display panel

Disclosed is an organic non-volatile memory (ONVM) material including nanoparticles evenly dispersed in a first polymer. The nanoparticles have a metal core covered by a second polymer to form a core/shell structure, and the first polymer has a higher polymerization degree and molecular weight than the second polymer. The ONVM material of the invention has high uniformity, thereby stabilizing the electric properties of the memory device, such as increasing rewrite counts, increasing data retention time, reducing driving voltage, reducing write current, and enhancing current on/off ratio.

Organic non-volatile memory material and memory device utilizing the same

Growing community of inventors

Hsinchu County, Taiwan

Heng-Tien Lin