Bridgelux Incorporated

Phostek, Inc.

Sct Incorporated

V-finity, Inc.

Other

Ncku Research and Development Foundation

Sct Technology, Ltd.

Toshiba Techno Center Inc.

Axt, Inc.

Pinecone Energies, Inc.

Lumei Optoelectronics Corporation

Toshiba Corporation

Bridelux, Inc.

Dalian Meiming

Epitaxy Technology Co., Ltd.

Heng Liu

Ray-Hua Horng

Eric Li

Chao-Kun Lin

Yi-An Lu

Shihfeng Shao

Chang Hung Pan

Changhua Chen

Jinn Kong Sheu

Yongsheng Zhao

William W So

Chyi S Chern

Eugene J Ruddy

Kevin Y Ma

Sheanyih Chiou

Yen-Chang Hsieh

Chun-Chao Li

Ya-Hsuan Shih

Chia-Nan Chen

James Dong

Frank T Shum

Vahid S Moshtagh

Michael Solomensky

Yun Li Li

Shih-Feng Shao

Jeffery Ramer

Xiuping Cheng

A display comprises a substrate (e.g., glass), a plurality of pixel circuits disposed on a back surface of the substrate, and a plurality of self-emitting devices disposed on a front surface of the substrate. The self-emitting devices are electrically connected to the plurality of pixel circuits by at least one electrically conductive via traveling through the substrate. Each pixel circuit comprises a first and a second transistor and a capacitor. The self-emitting devices may be LEDs or OLEDs for example.

LED display with pixel circuitry disposed on a substrate backside

A flat panel device, such as a flat display, comprises a substrate; a power circuit; a plurality of pixel circuits, each pixel circuit coupled to a self-emitting device; and a plurality of power lines electrically coupled to the plurality of pixel circuits. The plurality of power lines are also electrically coupled to the power circuit by a plurality of vias traveling through the substrate.

Flat panel device electrode structure

A light emitting diode display comprises a first panel, which comprises: a first layer having a substrate a second layer having a plurality of pixel circuits disposed on a first surface of the substrate; a plurality of light emitting diodes electrically connected to the pixel circuits; and a driver circuit communicatively coupled to the pixel circuits by at least one electrically conductive via traveling through the first layer; an edge of the panel having a non-emitting space having a length less than a length of a non-emitting space within the panel.

Flat panel LED display

Flat panel device electrode structure and method of manufacturing the same

An LED display module contains a PCB, one or more layers of molding compound disposed on the surface of the PCB, a network of conductive tracks disposed on a surface of the one or more layer of molding compound away from the PCB, a plurality of through-holes extending through the one or more layers of molding compound, and an array of LED chips disposed in the one or more layers of molding compound. Each of electrodes on the LED chip is connected to one of the conductive pads via a conductive path. The conductive path comprises a conductive material inside one of the plurality of the through-holes and a portion of the network of conductive tracks.

LED display module and method of making thereof

An LED display module includes an LED package having one or more layers of molding compound and containing an array of LED chips disposed therein, a plurality of conductive pads disposed on a surface of the LED package away from the array of LED chips, a network of conductive tracks connecting the array of LED chips with each other, and a plurality of conductive paths connecting the plurality of conductive pads and the network of conductive tracks. The network of conductive tracks includes a first layer of conductive tracks connecting the array of LED chips with each other, and a second layer of conductive tracks disposed substantially between the first layer of conductive tracks and the plurality of conductive pads.

An LED display module contains a substrate, and an array of light emitting devices arranged in rows and columns on a substrate. Each light emitting device has a LED chip electrically connected to contact pads on the substrate, a black resin portion covering around the contact pad, and a transparent resin portion molded around the LED chip and the black resin portion. By forming the black resin portion around each metal pad, the LED display module provides an increased contrast ratio for the display surface.

Molded LED display module and method of making thererof

A monolithic Light Emitting Diode (LED) micro-display contains one or more modular LED arrays. The LED array uses quantum dot light conversion technology or Organic Light Emitting Diode (OLED). The micro-display has a spacing-saving topology and a direct current driver architecture. Its modular design is scalable, which allows manufacturing micro-displays of various sizes using the same module.

Integrated multilayer monolithic assembly LED displays and method of making thereof

A light emitting diode (LED) display module includes an array of surface-mount devices (SMDs) arranged in rows and columns on a substrate. Each SMD has red, green, and blue LED chips connected to the substrate and a first transparent resin portion molded around the LED chips; a black resin portion molded around each SMD in a manner to fill spaces between SMDs so as to block light emitted from a sidewall of each SMD; and a second transparent resin portion molded on the first transparent resin portion and the black resin portion.

Molded surface mount device LED display module

A method for manufacturing a micro LED display is provided. The method includes providing a plurality of LED elements on a first substrate, transferring, using a magnetic holder or a vacuum holder, at least two of the plurality of LED elements of the same primary color from the first substrate to a second substrate, performing the steps of the providing and the transferring with respect to three primary colors, forming an array of RGB LED units on the second substrate, each of the array of RGB LED units including a red LED element, a green LED element, and a blue LED element, interposing the array of RGB LED units between the second substrate and an LED driver wafer, detaching the second substrate from the array of RGB LED units, and interposing the array of RGB LED units between the LED driver wafer and a cover.

Method for manufacturing a light emitted diode display

A light emitting diode comprising an epitaxial layer structure, a first electrode, and a second electrode. The first and second electrodes are separately disposed on the epitaxial layer structure, and the epitaxial layer structure has a root-means-square (RMS) roughness less than about 3 at a surface whereon the first electrode is formed.

Method for manufacturing light emitting diodes with smooth surface for reflective electrode

In one aspect, there is an apparatus that comprises a plurality of light emitting chips that each have active areas that have elongated aspect ratios. This chips are mounted in a generally rectangular package. The chips are each arranged around a periphery of the package so that each narrow side of each chip abuts either a sidewall forming the periphery of the package or a long side another of the chips. Some of the chips receive a biasing voltage through one or more other of the chips.

Multi-chip LED diode apparatus

A method of manufacturing a semiconductor apparatus is disclosed. A first-type doped layer, a second-type doped layer, and an internal electrical connection layer are formed. The internal electrical connection layer is deposited and electrically coupled between the first-type doped layer and the second-type doped layer. In one embodiment, the internal electrical connection layer is formed by using a group IV based precursor and nitrogen based precursor. In another embodiment, the internal electrical connection layer is formed by a mixture comprising a carbon-contained doping source, and the internal electrical connection layer has a carbon concentration greater than 10atoms/cm. In a further embodiment, the internal electrical connection layer is formed at a temperature lower than those of the first-type doped layer and the second-type doped layer.

Method of manufacturing a semiconductor apparatus

A semiconductor apparatus includes a p-type doped layer, an n-type doped layer, and an internal electrical connection layer that is deposited and electrically coupled between the p-type doped layer and the n-type doped layer. In one embodiment, the internal electrical connection layer includes a group IV element and a nitrogen element, and the number of atoms of the group IV element and the nitrogen element is greater than 50% of the total number of atoms in the internal electrical connection layer. In another embodiment, the internal electrical connection layer includes carbon element with a concentration greater than 10atoms/cm. In a further embodiment, the internal electrical connection layer is formed at a temperature lower than those of the p-type doped layer and the n-type doped layer.

Semiconductor apparatus

Growing community of inventors

Sunnyvale, CA, United States of America

Heng Liu