Huawei Technologies Co., Limited

Chinese Academy of Sciences

Anji Microelectronics (shanghai) Co., Ltd.

Heng Li

Wei Tang

Xiaodong Zhang

Hong Tao Liu

Hualiang Jiang

Kaixian Chen

Xu Han

Wenting Zhou

Yong Guan

Jian Ma

Fenghua Zhu

Jianfen Jing

Ying Yao

Tonglong Zhang

Tiantian Chen

Xinyuan Cai

Chunlan Feng

Zhanni Gu

Xianglei Zhang

Wuyan Chen

Guangyu Dong

Yechun Xu

A chip package structure includes a first chip, a second chip, and a carrier board. The first chip is disposed between the second chip and the carrier board. An active layer of the first chip is opposite to an active layer of the second chip. A first interconnection structure is disposed between the first chip and the second chip and is configured to couple the active layer of the first chip to the active layer of the second chip. A first conductor pillar is disposed in the first chip. One end of the first conductor pillar is coupled to the active layer of the first chip, and the other end of the first conductor passes through the first chip to be coupled to a circuit in the carrier board.

Chip package structure and chip packaging method

Disclosed are a novel tetrahydroisoquinoline compound, a method for preparing intermediates thereof, a pharmaceutical composition thereof and the use thereof. The tetrahydroisoquinoline compound of the present invention has a good inhibitory effect on phosphodiesterase (PDE4), and can be used in the prevention, treatment or auxiliary treatment of multiple diseases associated with the activity or expression of phosphodiesterase, especially PDE4-associated immune and inflammatory diseases, such as psoriasis and arthritis.

Tetrahydroisoquinoline compound, preparation method therefor, pharmaceutical composition containing same, and use thereof

A chemical mechanical polishing slurry, including silicon dioxide particles, a nitrogen-containing heterocyclic compound having one or more carboxy group(s), and an ethoxylated butoxylated alky alcohol, and use of the chemical mechanical polishing slurry in the polishing silicon oxide, polysilicon, and silicon nitride. Polishing rate for silicon nitride using the polishing slurry is much higher than that for silicon oxide and polysilicon. The polishing slurry can be applied to chemical mechanical polishing in which silicon oxide/polysilicon is used as the stop layer, and can be used to control the amount of oxide and polysilicon removed from the substrate surface during polishing.

Chemical mechanical polishing slurry and use thereof

Growing community of inventors

Shanghai, China

Heng Li