Inotera Memories, Inc.

Heng Hao Hsu

Tzung-Han Lee

Yu Lung Chang

Neng-Tai Shih

Hsu Chiang

Yaw-Wen Hu

A semiconductor electronic device structure includes a substrate having a trench disposed therein, a gate electrode disposed in the trench, and a gate dielectric layer disposed on the surface in the trench. The substrate and the gate electrode are electrically insulated from each other by the gate dielectric layer. The substrate further has a pair of doped areas. The doped areas each are vertically disposed along the two respective lateral sides of the trench. The doped areas each have a first portion and a second portion arranged atop the first portion. The first portion extends vertically to the portion of the substrate that is aligned to the gate electrode. The lateral dimension of the first portion is smaller than the lateral dimension of the second portion, and the doping concentration of the first portion is lighter than the doping concentration of the second portion.

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Taipei, Taiwan

Heng Hao Hsu