Nxp B.v.

Hendrikus Ferdinand Franciscus Jos

Stephan Jo Cecile Henri Theeuwen

Petra Christina Anna Hammes

Freerk Van Rijs

Radjindrepersad Gajadharsing

Thomas Christian Roedle

Ivo Bernhard Pouwel

An electronic device comprising a field-effect transistor having an inter digitated structure suitable for high-frequency power applications, and having multiple threshold voltages that are provided in different regions of each a segment of the interdigitated structure. This leads to a dramatic improvement in linearity over a large power range in the back-off region under class AB signal operation.

Electronic device comprising a field effect transistor for high-frequency applications

The LDMOS transistor () of the invention is provided with a stepped shield structure () and/or with a first () and a second () drain extension region having a higher dopant concentration than the second drain extension region, and being covered by the shield.

Electric device comprising an LDMOS transistor

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Nijmgen, Netherlands

Hendrikus Ferdinand Franciscus Jos