Rheinisch-westfalische Technische Hochschule (rwth) Aachen

Forschungszentrum Julich Gmbh

Hendrik Bluhm

Matthias Künne

Lars Schreiber

Feng Liu

Inga Seidler

Thomas Descamps

An electronic component is formed by a semiconductor component or a semiconductor-like structure having gate electrode assemblies for manipulating the quantum state of qubits in quantum dots. It comprises a substrate comprising a two-dimensional electron gas or electron hole gas. Electrical contacts connect the gate electrode assemblies to voltage sources. A first gate electrode assembly having gate electrodes is arranged on a surface of the electronic component to generate movable potential wells in the substrate. A second gate electrode assembly serves to generate a potential barrier, which is adjacent to the first gate electrode assembly. The gate electrode assemblies have parallel electrode fingers, whereby the electrode fingers of the first gate electrode assembly are periodically and alternately interconnected in order to effect an almost continuous movement of the potential wells through the substrate.

Manipulation zone for qubits in quantum dots

An electronic component () for generating and emitting electromagnetic waves or single photons () comprises a layer system () of semiconductor materials. A middle layer () of gallium arsenide is arranged between a first layer () of aluminum gallium arsenide and a second layer () of aluminum gallium arsenide. A first outer layer () of gallium arsenide is provided on the first layer () of aluminum gallium arsenide; A second outer layer () of gallium arsenide is provided on the second layer () of aluminum gallium arsenide.

Optically active quantum dot defined by gates

An electronic component () is designed as a semiconductor or with a semiconductor-like structure for moving a quantum dot () over a distance. The electronic component () comprises a substrate () having a two-dimensional electron gas or electron hole gas. A gate electrode assembly () having gate electrodes () is arranged on a surface () of the electronic component (). The gate electrode assembly () produces a potential well () in the substrate (). Electrical terminals for connecting the gate electrode assembly () to voltage sources are provided for this purpose. The disclosure further relates to a method for such an electronic component ().

Component having a band assembly for individual electron movement over a long distance

An electronic component () is formed by a semiconductor component or a semiconductor-like structure having gate electrode assemblies () for moving a quantum dot (). The electronic component () comprises a substrate () having a two-dimensional electron gas or electron hole gas. Electrical contacts connect the gate electrode assemblies () to voltage sources. A first gate electrode assembly () having gate electrodes (), which is arranged on a surface () of the electronic component in order to produce a potential well () in the substrate (). The gate electrode assembly () has parallel electrode fingers (), wherein the electrode fingers () are interconnected in a periodically alternating manner, which causes an almost continuous movement of the potential well () through the substrate (), whereby a quantum dot () is transported in one direction together with this potential well ().

Connection component for branching off a single electron motion

An electronic component is formed by a semiconductor component or a semiconductor-like structure having gate electrode assemblies, for reading out the quantum state of a qubit in a quantum dot. The electronic component comprises a substrate having a two-dimensional electron gas or electron hole gas. Electrical contacts connect the gate electrode assemblies to voltage sources. The gate electrode assemblies have gate electrodes, which are arranged on a surface of the electronic component, for producing potential wells in the substrate.

Component for reading out the states of qubits in quantum dots

An electronic component () is formed by a semiconductor component or a semiconductor-like structure having gate electrode assemblies (), for initializing the quantum mechanical state of a qubit.

Growing community of inventors

Aachen, Germany

Hendrik Bluhm