Globalfoundries U.S. Inc.

Globalfoundries Singapore Pte. Ltd.

Hemant M Dixit

Vinayak Bharat Naik

Kazutaka Yamane

Yusheng Bian

Theodore James Letavic

Eng Huat Toh

Jay A Mody

William James Taylor, Jr

Eng-Huat Toh

Julien Frougier

Bipul C Paul

Oscar Restrepo

Structures including an optical component and methods of fabricating a structure including an optical component. The structure includes an optical component having a waveguide core, and multiple features positioned adjacent to the waveguide core. The waveguide core contains a first material having a first thermal conductivity, and the features contain a second material having a second thermal conductivity that is greater than the first thermal conductivity.

Thermally-conductive features positioned adjacent to an optical component

The present disclosure relates to sensors and, more particularly, to magnetic field sensors. More specifically, a structure includes a package with a wraparound geometry and discontinuous ends, and includes a low permeability magnetic material.

Magnetic field sensor

The disclosed subject matter relates to semiconductor devices for use in optoelectronic/photonic applications and integrated circuit (IC) chips. More particularly, the present disclosure relates to photonic devices having thermally conductive layers for the removal of heat from optoelectronic components in the photonic devices.

Photonic devices integrated with thermally conductive layers

Structures including an optical component and methods of fabricating a structure including an optical component. The structure includes a substrate, an optical component including a waveguide core, and a back-end-of-line stack including a heat spreader layer. The optical component is positioned in a vertical direction between the substrate and the back-end-of-line stack. The waveguide core contains a first material having a first thermal conductivity, and the heat spreader layer contains a second material having a second thermal conductivity that is greater than the first thermal conductivity of the first material.

Thermal management of an optical component for temperature control

Structures including an optical component and methods of fabricating a structure including an optical component. The structure includes a waveguide core and a back-end-of-line stack including a first metallization level, a second metallization level, and a heat sink having a metal feature in the second metallization level. The heat sink is positioned adjacent to a section of the waveguide core. The first metallization level including a dielectric layer positioned between the metal feature and the section of the waveguide core.

Optical components with enhanced heat dissipation

The present disclosure relates to integrated circuits, and more particularly, a tunnel magneto-resistive (TMR) sensor with perpendicular magnetic tunneling junction (p-MTJ) structures and methods of manufacture and operation. The structure includes: a first magnetic tunneling junction (MTJ) structure on a first level; a second MTJ structure on a same wiring level as the first MTJ structure; and at least one metal line between the first MTJ structure and the second MTJ structure.

Tunnel magneto-resistive (TMR) sensor with perpendicular magnetic tunneling junction (p-MTJ) structures

The present disclosure relates to integrated circuits, and, more particularly, to a magnetic field sensor using magnetic tunneling junction (MTJ) structures and passive resistors, and methods of manufacture and operation. The structure includes: a first portion of a circuit including a first MTJ structure and a first resistor coupled in series between a first voltage source and a second voltage source; and a second portion of the circuit including a second MTJ structure and a second resistor coupled in series between the first voltage source and the second voltage source. The first portion and the second portion are coupled in parallel between the first voltage source and the second voltage source.

Magnetic field sensor using magnetic tunneling junction (MTJ) structures and passive resistors

A magnetic field sensor may include a plurality of MTJ elements. Each MTJ element of has a state indicated by a magnetic moment direction of a sensing layer relative to a pinned, reference layer in an absence of an external magnetic field. The plurality of MTJ elements are arranged into two identical sets of at least two MTJ elements, where each MTJ element in each respective set has a different state. The states of the MTJ elements are arranged in a manner to measure the external magnetic field regardless of the direction of the external magnetic field. The MTJ elements include identical layers, and are electrically serially connected.

Magnetic field sensor with MTJ elements arranged in series

An illustrative memory cell disclosed herein includes a bottom electrode, a top electrode positioned above the bottom electrode and an MTJ (Magnetic Tunnel Junction) structure positioned above the bottom electrode and below the top electrode. In this example, the MTJ structure includes a first ferromagnetic material layer positioned above the bottom electrode, a non-magnetic insulation layer positioned above the first ferromagnetic material layer and a second ferromagnetic material layer positioned on the non-magnetic insulation layer, wherein there is a curved, non-planar interface between the non-magnetic insulation layer and the ferromagnetic material layer.

Memory cell having a free ferromagnetic material layer with a curved, non-planar surface and methods of making such memory cells

The present disclosure relates to integrated circuits, and more particularly, to a highly sensitive tunnel magnetoresistance sensor (TMR) with a Wheatstone bridge for field/position detection in integrated circuits and methods of manufacture and operation. In particular, the present disclosure relates to a structure including: a first magnetic tunneling junction (MTJ) structure on a first device level; and a second magnetic tunneling junction (MTJ) structure on a different device level than the first MTJ structure. The second MTJ structure includes properties different than the first MTJ structure.

Magnetic field sensor using different magnetic tunneling junction (MTJ) structures

One illustrative MRAM cell disclosed herein includes a bottom electrode, a top electrode positioned above the bottom electrode and an MTJ (Magnetic Tunnel Junction) element positioned above the bottom electrode and below the top electrode. In this example, the MTJ element includes a bottom insulation layer positioned above the bottom electrode, a top insulation layer positioned above the bottom electrode; and a first ferromagnetic material layer positioned between the bottom insulation layer and the top insulation layer.

MRAM device and methods of making such an MRAM device

Embodiments of the disclosure provide a system for providing a true random number (TRN) or physically unclonable function (PUF), including: an array of voltage controlled magnetic anisotropy (VCMA) cells; a voltage pulse tuning circuit for generating and applying a stochastically tuned voltage pulse to the VCMA cells in the array of VCMA cells, wherein the stochastically tuned voltage pulse has a magnitude and duration that provides a 50%-50% switching distribution of the VCMA cells in the array of VCMA cells; and a bit output system for reading a state of each of the VCMA cells in the array of VCMA cells to provide a TRN or PUF.

True random number generation and physically unclonable functions using voltage control of magnetic anisotropy effects in STT-MRAM

In APT systems and methods, a sample is analyzed by concurrently applying different types of energy to the tip of the sample, thereby causing atom evaporation from the end of the tip. Evaporated atoms are analyzed to determine chemical nature and original position information, which is used to generate a compositional profile. To ensure an accurate profile, the applied energy includes: a D.C. voltage, which lowers the critical energy level (Q) for atom evaporation; first laser pulses, which are applied to opposing first sides of the tip near the end to further lower Q and which are phase-shifted so resulting standing wave patterns of heat distribution have energy maxima that are offset and below a threshold to avoid damage to tip side surfaces; and second laser pulse(s), which is/are applied to second side(s) of the tip near the distal end to reach Q and cause atom evaporation from the end.

System and method for performing three-dimensional compositional analyses

An illustrative method disclosed herein includes measuring at least one electrical-related parameter of a doped semiconductor material by simultaneously irradiating at least a portion of an upper surface of the doped semiconductor material, urging a conductive tip of a cantilever beam probe into conductive contact with the upper surface of the irradiated portion of the doped semiconductor material, and generating an electrical current that flows through the doped semiconductor material, through a measurement device that is operatively coupled to the cantilever beam probe and through the cantilever beam probe, wherein the measurement device measures the at least one electrical-related parameter of the doped semiconductor material.

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Halfmoon, NY, United States of America

Hemant M Dixit