Avogy, Inc.

Other

Hemal N Shah

Donald Ray Disney

Sitthipong Angkititrakul

Vinod Khosla

Heratch Amirkhani Namagerdi

An electrical adapter can include a rectifying circuit configured to receive an AC power input, a power factor corrector (PFC) circuit coupled with an output of the rectifying circuit, and a capacitive component coupled with an output of the PFC circuit. The electrical adapter can further include a DC-DC converter circuit coupled with an output of the capacitive component and configured to provide a power output of the electrical adapter, and an impedance-measuring circuit coupled with the power output and configured to measure impedance of a cable connected to the power output. The DC-DC converter circuit can be configured to adjust power of the power output based on the measured impedance.

AC-DC converter with adjustable output

An electrical circuit includes an input for an AC input voltage coupled to a first inductive element with first and second outputs coupled to respective first and second nodes, and a four-quadrant (4-Q) switch coupled between the first and second nodes. A capacitor is coupled between the first node and a third node, a second inductive element is coupled between the third node and the second node, and a first bidirectional device and a first diode are coupled in series between a positive output node and a negative output node. A first output of the second inductive element is coupled between the first bidirectional device and the first diode. A second bidirectional device and a second diode are coupled in series between the positive output node and the negative output node. A second output of the second inductive element is coupled between the second bidirectional device and the second diode.

AC-DC converter for wide range output voltage and high switching frequency

An electronic package includes a leadframe and a plurality of pins. The electronic package also includes a first gallium nitride (GaN) transistor comprising a source, gate, and drain and a second GaN transistor comprising a source, gate, and drain. The source of the first GaN transistor is electrically connected to the leadframe and the drain of the second GaN transistor is electrically connected to the leadframe. The electronic package further includes a first GaN diode comprising an anode and cathode and a second GaN diode comprising an anode and cathode. The anode of the first GaN diode is electrically connected to the leadframe and the cathode of the second GaN diode is electrically connected to the leadframe.

Method and system for co-packaging vertical gallium nitride power devices

An electronic package includes a leadframe and a plurality of pins. The electronic package also includes a first gallium nitride (GaN) transistor comprising a source, gate, and drain and a second GaN transistor comprising a source, gate, and drain. The source of the first GaN transistor is electrically connected to the leadframe and the drain of the second GaN transistor is electrically connected to the leadframe. The electronic package further includes a first GaN diode comprising an anode and cathode and a second GaN diode comprising an anode and cathode. The anode of the first GaN diode is electrically connected to the leadframe and the anode of the second GaN diode is electrically connected to the leadframe.

Method and system for interleaved boost converter with co-packaged gallium nitride power devices

An electronic circuit comprising a driver and a main transistor are provided. The driver may include a bias voltage generator, a supplementary transistor, and an output driver. The bias voltage generator may be configured to receive a voltage input and generate a biased voltage output based on the voltage input. The supplementary transistor may have a gate coupled to the biased voltage output of the bias voltage generator, and a source of the supplementary transistor providing a current to the bias voltage generator. The output driver may be configured to receive the biased voltage output from the bias voltage generator and the voltage input, receive the voltage input, and output a drive voltage. The main transistor of the electronic circuit may have a gate, a coupled to the drive voltage, and a drain coupled to a drain of the supplementary transistor.

Method and system for operating gallium nitride electronics

An electronic package includes a leadframe, a plurality of pins, a gallium-nitride (GaN) transistor, and a GaN diode. The GaN transistor includes a drain region, a drift region, a source region, and a gate region; the drain region includes a GaN substrate and a drain contact, the drift region includes a first GaN epitaxial layer coupled to the GaN substrate, the source region includes a source contact and is separated from the GaN substrate by the drift region, and the gate region includes a second GaN epitaxial layer and a gate contact. The GaN diode includes an anode region and a cathode region, the cathode region including the GaN substrate and a cathode contact, and the anode region including a third GaN epitaxial layer coupled to the GaN substrate and an anode contact. The drain contact and the anode contact are electrically connected to the leadframe.

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San Mateo, CA, United States of America

Hemal N Shah