Lam Research Corporation

Novellus Systems Incorporated

Dielectric Coating Industries

Helmuth W Treichel

Mike Ravkin

Julia S Svirchevski

Roy Winston Pascal

Donald E Anderson

Tanlin K Dickey

Allan M Radman

Douglas S Gardner

John Martin De Larios

Michael Ravkin

Alan John Jensen

David L Chen

Jeffrey J Farber

Michael S Lacy

Kirk J Ostrowski

Don E Anderson

Senzi Li

Robert G Boehm

Eric A Dunton

Jim Su

Chevan Goonetilleke

A polymer based coating for application to rolled stock, such as aluminum is provided. A device for applying the polymer based coatings is also provided. Polymer based coatings applied to rolled stock, such as aluminum, are advantageous compared to anodized coatings since the polymers are self-leveling and may be applied to lower grades of aluminum, while still providing a smooth and durable surface finish.

Polymer based roll coating

A method and apparatus for conditioning a polishing pad is described, wherein the polishing pad has a polishing surface for polishing the semiconductor wafer. The method includes positioning a sonic energy generator above the polishing surface of the polishing pad, and applying sonic energy to the polishing surface of the polishing pad. The apparatus a sonic energy generator adapted to be positioned above the polishing surface, the sonic energy generator including a transducer, and a liquid carrier in flow communication with the transducer, wherein the transducer transmits sonic energy into the liquid carrier and the liquid carrier is applied to the polishing surface of the polishing belt.

Method and apparatus for conditioning a polishing pad with sonic energy

A unique photoresist strip sequence using a downstream plasma system is described. The sequence can include a RF directional plasma alone, downstream plasma alone or combine both RF plasma and downstream plasma together. The process sequence can be a single step or multiple steps, which produce high strip rates while maintaining the dielectric properties of the film. The process can be an oxidizing process carried out at low temperature and low pressure, which reduces the reactivity of the oxygen with the low-k film. Furthermore, by adding a small percentage of an additive gas, such as a fluorine-containing gas, to the plasma, the inorganic residues from the strip process are removed, leaving a clean film cleared of photoresist and residue.

Method for removing photoresist from low-k films in a downstream plasma system

A brush core and the method for making a brush core for use in substrate scrubbing are provided. The substrate can be any substrate that may need to undergo a scrubbing operation to complete a cleaning operation, etching operation, or other preparation. For instance, the substrate can be a semiconductor wafer, a disk, or any other type of work piece that will benefit from a brush core that can deliver uniform controlled amounts of fluid through the brush along an entire length of the brush core. The brush core is defined by a tubular core having a length that extends between a first end and a second end. The first end has an opening into a bore that is defined through a middle of the tubular core and extends along an inner length of the tubular core. A first plurality of holes are oriented along a plurality of first lines that extend in the direction of the length of the tubular core, and each of the first plurality of holes define paths to the bore of the tubular core. A second plurality of holes are oriented along a plurality of second lines that extend in the direction of the length of the tubular core, and each of the second plurality of holes define paths to the core of the tubular core. The plurality of first lines and the plurality of second lines alternate and the holes of the first and second plurality of holes are equally spaced apart. The holes of the second plurality of holes are offset relative to the holes of the first plurality of holes.

Wafer scrubbing brush core

A method and apparatus for processing a wafer are described. In one embodiment, a method for processing a wafer comprises applying a sealing mechanism to the wafer to create multiple separate, sealed portions of the wafer, and applying a plurality of different chemistries to multiple separate, sealed portions of the wafer through the sealing mechanism.

Method and apparatus for removal of thin films from wafers

A method for post plasma etch cleaning a semiconductor wafer is provided. The semiconductor wafer has a plurality of layers formed thereon, and one of the plurality of layers is an oxide layer that has an overlying photoresist mask. The method includes plasma etching a via feature in the oxide layer. The plasma etching is configured to generate a polymer film on sidewalls of the via feature. An ashing operation is then performed to remove the photoresist mask. The method then moves to brush scrubbing the oxide layer and the via feature defined in the oxide layer with first chemicals in a first brush station. Brush scrubbing the oxide layer and the via feature follows with DI water in the first brush station. Then, the oxide layer and the via feature are brush scrubbed with second chemicals in a second brush station. In the same second brush station, the oxide layer and the via feature are scrubbed with DI water. The brush scrubbing in the first and second brush stations is configured to remove the polymer film from the side walls of the via feature.

Methods for cleaning substrate surfaces after etch operations

Growing community of inventors

Milpitas, CA, United States of America

Helmuth W Treichel