Siemens Aktiengesellschaft

Helmut Thomann

Christa Grabmaier

Wolfram Wersing

Helmut Schmelz

Lothar Balling

Norbert Landgraf

Dieter Baeuerle

Josef Sprehe

Dietmar Hein

Wolfgang Gajewski

Franz Otto

Hans Ranly

Eva-Helga Wilbert

Michael Eyett

Renate Kuschke

Richard Reppisch

A method for working an oxide material, and preferably a ceramic oxide material, with a laser emission of an excimer laser and without the creation of damage layers includes pulsing the laser emission to be impinged on the material to be worked.

Method for working members composed of oxide material

Catalytic material for reducing nitrous oxides in flue gases in the presence of ammonia in which titanium oxide is used as the starting material and the latter is milled together with vanadium oxide and one or more oxides of the elements tungsten, molybdenum, phosphorus, chromium, copper, iron, uranium and is thereafter subjected to at least one thermal treatment. Tungsten and molybdenum are substituted here entirely or partially by phosphorus in the form of its oxides or phosphates.

Process utilizing catalytic material for the reduction of nitrous oxides

Selectively shaped silicon crystal bodies, such as plate- or tape-shaped bodies, having crystalline pillar-like structures therein are produced by forming a slurry from an admixture of relatively fine sized silicon particles and a liquid binder, extruding such slurry as a relatively thin layer onto a first support member, drying such extruded layer until it becomes self-supporting and removing such support member, and then sintering such dried layer in a protective gas atmosphere at temperatures below about 1430.degree. C. until a layer of crystalline silicon particles are generated or grown having an average diameter substantially corresponding to the thickness of the dried slurry layer.

Method of producing plate- or tape-shaped silicon crystal bodies having

X-rays or .gamma.-rays are detected by irradiating a beam of high energy radiation onto a crystalline bismuth oxide compound having the formula Bi.sub.10-14 X.sub.1 O.sub.n wherein X is at least one element selected from the group consisting of Al, Ga, Ge, Si and Ti and n is a numeral substantially equal to the stoichiometric amount of oxygen within the compound. The above bismuth oxide crystalline compound may be placed in a radiation dosimeter or be applied as a radiation-sensitive coating on a cylinder or plate of an apparatus for producing electrostatic copies (i.e., an in a xerographic process or the like). This is a division of application Ser. No. 837,197, filed Sept. 28, 1977.

Electrophotographic element with bismuth oxide compound

X-rays or .gamma.-rays are detected by irradiating a beam of high energy radiation onto a crystalline bismuth oxide compound having the formula Bi.sub.10-14 X.sub.1 O.sub.n wherein X is at least one element selected from the group consisting of Al, Ga, Ge, Si and Ti and n is a numeral substantially equal to the stoichiometric amount of oxygen within the compound. The above bismuth oxide crystalline compound may be placed in a radiation dosimeter or be applied as a radiation-sensitive coating on a cylinder or plate of an apparatus for producing electrostatic copies (i.e., an in a xerographic process or the like).

Method of detecting high energy radiation via a bismuth oxide compound

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Munich, Germany

Helmut Thomann