Siltronic Ag

Helmut Schwenk

Peter Storck

Roland Brunner

Sarad Bahadur Thapa

Wolfgang Hensel

Frank Muemmler

Ute Rothammer

Rudolf Lehner

Peter Dreier

Johann Zach

Guenter Sachs

Rudolf Mayrhuber

Frank Mümmler

Günter Sachs

A layered semiconductor substrate has a monocrystalline first layer based on silicon, having a first thickness and a first lattice constant adetermined by a first dopant element and a first dopant concentration, and in direct contact therewith, a monocrystalline second layer based on silicon, having a second thickness and a second lattice constant a, determined by a second dopant element and a second dopant concentration, and a monocrystalline third layer comprising a group III nitride, the second layer located between the first layer and the third layer, wherein a&#x3e;a, wherein the crystal lattice of the first layer and the second layer are lattice-matched, and wherein the bow of the layered semiconductor substrate is in the range from &#x2212;50 &#x3bc;m to 50 &#x3bc;m.

Layered semiconductor substrate with reduced bow having a group III nitride layer and method for manufacturing it

Unpolished semiconductor wafers are produced by: (a) pulling a single crystal of a semiconductor material, (b) grinding the single crystal round, (c) separating a semiconductor wafer from this crystal, (d) rounding the edge of the semiconductor wafer, (e) surface-grinding at least one side of the semiconductor wafer, (f) treating the semiconductor wafer with an etchant, and (g) cleaning the semiconductor wafer. The unpolished semiconductor wafers have, on at least the front side, a reflectivity of 95% or more, a surface roughness of 3 nm or less, have a thickness of 80-2500 &#x3bc;m, an overall planarity value GBIR of 5 &#x3bc;m or less with an edge exclusion of 3 mm and a photolithographic resolution of at least 0.8 &#x3bc;m, and which furthermore contain a native oxide layer with a thickness of 0.5-3 nm on both sides.

Unpolished semiconductor wafer and method for producing an unpolished semiconductor wafer

A process for the wet chemical treatment of semiconductor wafers, in which the semiconductor wafers are treated with treatment liquids, has the semiconductor wafers firstly treated with an aqueous HF solution, then treated with an aqueous Osolution and finally treated with water or an aqueous HCl solution, these treatments forming a treatment sequence.

Process for the wet chemical treatment of semiconductor wafers

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Burghausen, Germany

Helmut Schwenk