Infineon Technologies Ag

Infineon Technologies Austria Ag

Helmut Schoenherr

Juergen Steinbrenner

Markus Kahn

Martin Poelzl

Ravi Keshav Joshi

Thomas Grille

Ursula Hedenig

Uwe Hoeckele

Herbert Gietler

Heimo Hofer

Kurt Matoy

Hubert Maier

Silke Auchter

Joern Plagmann

Christian Krenn

Harald Huetter

Clemens Rössler

Silvana Fister

Christoph Brunner

Matthias German Dietl

Lina Purwin

Alexander Zesar

Peter Oles

Ralph Muth

Elfriede Kraxner Wellenzohn

A device for controlling trapped ions includes a substrate. A first metal layer is disposed over the substrate. An insulating layer is disposed over the first metal layer. A structured second metal layer is disposed over the insulating layer. The structured second metal layer includes an electrode of an ion trap configured to trap ions in a space above the structured second metal layer. The electrode of the structured second metal layer and the first metal layer overlap each other. The device further includes a void space in the insulating layer between the first metal layer and the electrode of the structured second metal layer, the void space including a vacuum at least during operation of the device.

Device for controlling trapped ions with low heat dissipation

In various aspects of the disclosure, a semiconductor device including at least one semiconductor die; a dielectric layer adjoining the semiconductor die; geometric structures formed in the dielectric layer; and a conductive layer deposited over the dielectric layer, wherein the conductive layer is at least partially located over the geometric structures.

Production of adhesion structures in dielectric layers using photoprocess technology and devices incorporating adhesion structures

A passivation layer and a method of making a passivation layer are disclosed. In one embodiment the method for manufacturing a passivation layer includes depositing a first silicon based dielectric layer on a workpiece, the first silicon based dielectric layer comprising nitrogen, and depositing in-situ a second silicon based dielectric layer on the first silicon based dielectric layer, the second dielectric layer comprising oxygen.

Passivation layer and method of making a passivation layer

In various embodiments, a method for coating a workpiece is provided. The method may include drying a workpiece, the workpiece being coated with at least one oxide layer as an uppermost layer; depositing a dielectric layer over the uppermost layer of the dried workpiece; wherein the workpiece is continuously subject to a pressure which is lower than atmospheric pressure during the drying process and during the depositing process.

Method for coating a workpiece

A method for depositing an insulating layer includes performing a primary deposition over a sidewall of a feature by depositing a layer of silicate glass using a silicon source at a first flow rate and a dopant source at a second flow rate. A ratio of the flow of the dopant source to the flow of the silicon source is a first ratio. The method further includes performing a secondary deposition over the sidewall of a feature by increasing the flow of the silicon source relative to the flow of the dopant source. The ratio of the flow of the dopant source to the flow of the silicon source is a second ratio lower than the first ratio, and stopping the flow of the silicon source after performing the secondary deposition. A reflow process is performed after stopping the flow. A variation in thickness of the layer of silicate glass over the sidewall of a feature after the reflow process is between 1% to 20%.

Controlling the reflow behaviour of BPSG films and devices made thereof

Growing community of inventors

Villach, Austria

Helmut Schoenherr