Wacker Siltronic Gesellschaft Fur Halbleitermaterialien Ag

Helmut Pinzhoffer

Peter Vilzmann

Apparatus for preparing a single crystal made of silicon is according to Czochralski method, which includes a tubular to the conical body which shields the growing single crystal and divides the receiver chamber above the melt into an inner portion and an outer portion, the body having at least one orifice through which inert gas which is conducted into the inner portion of the receiver chamber is able to pass directly into the outer portion of the receiver chamber. The method for preparing a single crystal made of silicon is in accordance with the Czochralski method, wherein a portion of an inert gas stream is conducted through at least one orifice in the tubular to conical body from the inner portion into the outer portion of the receiver chamber.

Growing community of inventors

Tann, Germany

Helmut Pinzhoffer