Siemens Aktiengesellschaft

Minebea Company, Limited

Helmut Mueller

Juergen Graul

Thomas Rambold

Bernhard Werres

Walter Degle

Hans P Von Ow

A synchronous rectifier circuit, comprising a power transformer which has a primary side, including first and second primary winding sections, and a secondary side, including first and second secondary winding sections, a rectifier circuit at the secondary side of the power transformer, which rectifier circuit comprises first and second MOSFETs associated with the first and second secondary winding sections, respectively, first and second current transforming means associated with the first and second secondary winding sections, respectively, and first and second drive circuits for the first and second MOSFETs, respectively, each current transforming means generating first and second currents which are dependent on the current of the associated secondary winding section of the power transformer, and each drive circuit comprising first and second branches to receive the first and second currents, respectively, generated by the current transforming means, and the first branch comprising a diode and a transconductance choke, and the second branch comprising a diode.

Synchronous rectifier circuit

A pyrometer is located beneath a soldering path downstream of a flow nozzle and is shielded by a metal plate which extends transversely relative to the soldering direction and obliquely upwardly toward the path. The pyrometer is connected to a limit value generator which responds when the limit value is exceeded.

Arrangement for monitoring the temperature in flow soldering of flat

In a process for transmitting items of information between devices of an indirectly controlled exchange system via time division multiplex (TDM) channels, with multiple repetition of the items of information, the items of information comprise a plurality of bytes including a number byte which numbers the relevant item of information. The items of information are transmitted by means of buffer stores and multiplexers. The item of information also include a acknowledgment bytes which acknowledge the correct reception of previously transmitted items of information. The reception of acknowledgement bytes is also evaluated as a signal that the TDM channel previously used to transmit the acknowledged information has been released for the transmission of a further item of information.

Process for transmitting items of information between devices of an

A semiconductor component is described which includes two zones of opposite conductivity type having a pn junction therebetween, and in which one zone is formed of a monocrystalline semiconductor substrate body and the other zone is produced in the semiconductor body by a doping process, such, for example, as by an implantation or diffusing process. Before the diffusion or implantation takes place, a zone is created at or near the substrate surface which has a disturbed crystal lattice. The diffusion or implantation then takes place through the disturbed zone. A process for producing such a semiconductor component is also described. The other zone may also be produced after the disturbed crystal lattice is produced in the portion of the substrate body which portion will later become the second zone.

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Augsburg, Germany

Helmut Mueller