Siemens Aktiengesellschaft

Infineon Technologies Ag

Helmut Hertrich

Jenoe Tihanyi

Helmut Strack

Rainald Sander

Jeno Tihanyi

Veli Kartal

Frank Kahlmann

Fritz Kirschner

Detlef Kalz

Manuel G&auml;rtner

A power switching device has a power switching transistor connected in series in a load circuit with an inductive load portion and a commutation circuit. The commutation circuit is connected in parallel with the gate-drain or base-collector path of the power transistor and has a first Zener diode, which determines the commutation clamping voltage for switching on the power switching transistor during commutation, and an oppositely biased normal diode that is connected in series with the first Zener diode. The commutation circuit further has control elements in order to reduce, during a short time, the commutation clamping voltage at the beginning of each commutation cycle or after an adjustable delay from the beginning of each commutation cycle.

Power switching device

The temperature sensor measures temperatures within a defined temperature measuring range. The sensor includes a reference voltage source with an output terminal to which a reference voltage is applied and which is connected to a first input terminal of a comparator. A series circuit of a semiconductor component with temperature-independent current characteristic and a reference component is connected between a first and a second supply voltage terminal. A temperature-dependent voltage is applied to a node common to the semiconductor component and the reference component. The temperature-dependent voltage is fed to a second input terminal of the comparator. The supply voltage is adjustable within a defined supply voltage range and, within a voltage range resulting from the supply voltage range of a voltage across the reference component, the reference component has a voltage-dependent current characteristic.

Temperature sensor

The base zones of MOSFETs and IGBTs are generated by implanting dopants of the second conductivity type into the surface of a first layer of the first conductivity type, and a second layer of the first conductivity type is deposited thereon. During the deposition, the dopants diffuse up to the surface of the second layer and form base zones. The base zones are thereby provided with a laterally expanded region of high conductivity under the surface through which the minority carriers can flow off to the source electrode with low voltage drop.

Method for manufacturing field effect controlled semiconductor components

A power MOSFET with improved avalanche resistance has a cell field in which the lateral cells are provided with source zones which are partly omitted or of a reduced size. The avalanche resistance is further improved in terms of reduced manufacturing cost in that a p-doped annular zone is disposed between the cell field and the edge of the semiconductor body. An annular trench is formed in the annular zone. The annular trench is contacted with the source metallization. The annular zone and the annular trench have the same depth as the gate zones of the cells and/or as the source contact holes.

Power MOSFET with improved avalanche resistance

An integrated circuit for protecting subscriber lines against overvoltages includes a semiconductor body; a field-controllable thyristor having a gate electrode, an anode electrode and a cathode electrode, the gate electrode being insulated from the semiconductor body; a resistor connected between the cathode electrode and the gate electrode; a series circuit of Zener diodes connected between the gate electrode and the anode electrode, each of the Zener diodes having an anode electrode and a cathode electrode; and short circuit jumpers each being connected between the anode electrode and the cathode electrode of a respective one of at least part of the Zener diodes; at least part of the jumpers being interrupted corresponding to a predetermined breakdown voltage of the series circuit; and the thyristor having a larger breakdown voltage than the combined breakdown voltages of the Zener diodes of the series circuit of Zener diodes.

Growing community of inventors

Vaterstetten, Germany

Helmut Hertrich